Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

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7 Citations (Scopus)

Abstract

Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.

Original languageEnglish
Pages (from-to)398-402
Number of pages5
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - Feb 2 1989

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Tsutsui, K., Asano, T., Ishiwara, H., & Furukawa, S. (1989). Growth of single domain GaAs/fluoride/Si structures. Journal of Crystal Growth, 95(1-4), 398-402. https://doi.org/10.1016/0022-0248(89)90428-4