Abstract
Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.
Original language | English |
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Pages (from-to) | 398-402 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 95 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Feb 2 1989 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry