Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui; Tanemasa Asano; Hiroshi Ishiwara; Seijiro Furukawa

doi:10.1016/0022-0248(89)90428-4

Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Integrated Electronic Systems

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF₂/Si was suppressed by RTA process for planarization of facets on CaF₂ surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F₂/CaF₂, was also effective, where single domain GaAs layers were obtained without the RTA process.

Original language	English
Pages (from-to)	398-402
Number of pages	5
Journal	Journal of Crystal Growth
Volume	95
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(89)90428-4
Publication status	Published - Feb 2 1989

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(89)90428-4

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Tsutsui, K., Asano, T., Ishiwara, H., & Furukawa, S. (1989). Growth of single domain GaAs/fluoride/Si structures. Journal of Crystal Growth, 95(1-4), 398-402. https://doi.org/10.1016/0022-0248(89)90428-4

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abstract = "Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.",

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AU - Tsutsui, Kazuo

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

AU - Furukawa, Seijiro

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