Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.

Original languageEnglish
Pages (from-to)398-402
Number of pages5
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - Feb 2 1989
Externally publishedYes

Fingerprint

Rapid thermal annealing
Fluorides
fluorides
flat surfaces
disorders
Substrates
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Tsutsui, K., Asano, T., Ishiwara, H., & Furukawa, S. (1989). Growth of single domain GaAs/fluoride/Si structures. Journal of Crystal Growth, 95(1-4), 398-402. https://doi.org/10.1016/0022-0248(89)90428-4

Growth of single domain GaAs/fluoride/Si structures. / Tsutsui, Kazuo; Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

In: Journal of Crystal Growth, Vol. 95, No. 1-4, 02.02.1989, p. 398-402.

Research output: Contribution to journalArticle

Tsutsui, K, Asano, T, Ishiwara, H & Furukawa, S 1989, 'Growth of single domain GaAs/fluoride/Si structures', Journal of Crystal Growth, vol. 95, no. 1-4, pp. 398-402. https://doi.org/10.1016/0022-0248(89)90428-4
Tsutsui, Kazuo ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / Growth of single domain GaAs/fluoride/Si structures. In: Journal of Crystal Growth. 1989 ; Vol. 95, No. 1-4. pp. 398-402.
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