Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui; Tanemasa Asano; Hiroshi Ishiwara; Seijiro Furukawa

doi:10.1016/0022-0248(89)90428-4

Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF₂/Si was suppressed by RTA process for planarization of facets on CaF₂ surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F₂/CaF₂, was also effective, where single domain GaAs layers were obtained without the RTA process.

Original language	English
Pages (from-to)	398-402
Number of pages	5
Journal	Journal of Crystal Growth
Volume	95
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(89)90428-4
Publication status	Published - Feb 2 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/0022-0248(89)90428-4

Cite this

@article{841810a8a7b74bbd8107978f1d765a29,

title = "Growth of single domain GaAs/fluoride/Si structures",

abstract = "Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.",

author = "Kazuo Tsutsui and Tanemasa Asano and Hiroshi Ishiwara and Seijiro Furukawa",

year = "1989",

month = feb,

day = "2",

doi = "10.1016/0022-0248(89)90428-4",

language = "English",

volume = "95",

pages = "398--402",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Growth of single domain GaAs/fluoride/Si structures

AU - Tsutsui, Kazuo

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

AU - Furukawa, Seijiro

PY - 1989/2/2

Y1 - 1989/2/2

N2 - Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.

AB - Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.

UR - http://www.scopus.com/inward/record.url?scp=0024605985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024605985&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(89)90428-4

DO - 10.1016/0022-0248(89)90428-4

M3 - Article

AN - SCOPUS:0024605985

VL - 95

SP - 398

EP - 402

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -

Growth of single domain GaAs/fluoride/Si structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this