Growth of square Si single bulk crystals with large side-face widths using noncontact crucible method

Kazuo Nakajima, Ryota Murai, Kohei Morishita

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The noncontact crucible method was used to prepare square Si single bulk crystals. The size of the square part of the ingots was determined by the side-face width of the four-cornered pattern that appeared on the top surface. We obtained square Si single crystals with sizes of 9.4 ' 9.7 and 10.9 ' 11.0cm2 that had no fan-shaped {110} faces and had diagonal lengths of up to 91% of the crucible diameter. To obtain large square Si single bulk crystals with a large side-face width using the present method, the importance of establishing a larger low-temperature region in the Si melt while maintaining a smaller initial temperature reduction was considered.

Original languageEnglish
Article number025501
JournalJapanese Journal of Applied Physics
Volume53
Issue number2 PART 1
DOIs
Publication statusPublished - Feb 10 2014
Externally publishedYes

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Crucibles
crucibles
Crystals
ingots
Ingots
fans
Fans
crystals
Single crystals
Temperature
single crystals
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Growth of square Si single bulk crystals with large side-face widths using noncontact crucible method. / Nakajima, Kazuo; Murai, Ryota; Morishita, Kohei.

In: Japanese Journal of Applied Physics, Vol. 53, No. 2 PART 1, 025501, 10.02.2014.

Research output: Contribution to journalArticle

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