Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions

Takayuki Watanabe, Susanne Hoffmann-Eifert, Shaobo Mi, Chunlin Jia, Rainer Waser, Cheol Seong Hwang

Research output: Contribution to journalArticle

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Abstract

Ternary PbTi Ox films were deposited at 240 °C on Pt-covered Si substrates using a combination of liquid injection atomic layer depositions of binary Ti Ox and PbO films. Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] and Pb (C11 H19 O2) 2 [Pb (DPM)2] dissolved in ethylcyclohexane and H2 O were used as source materials. The deposition rates of Pb and Ti were enhanced in the ternary process compared to their binary processes under comparable deposition conditions. The PbTi ratio of PbTi Ox films saturated with an increase in Ti precursor input, while it continued to increase with an increasing Pb precursor input. The self-regulated growth nature of the Pb-O layer in the binary film growth was lost in the mixed PbTi Ox process as a result of interaction with the predeposited Ti-O layer. It was confirmed that for the PbTi Ox film to grow on Pt substrates, an initial incubation period is required. Both Pb-O and Ti-O layers shared a common incubation period of up to ten sequences. The incubation period was shortened by increasing the input of Pb precursor. It was independent of the input of the Ti precursor and the order of precursor supply. This variable incubation period was considered as a potential key issue for growing stoichiometric and uniform multicomponent films over three-dimensional (3D) structures. The order of precursor supply affected the effective deposition rate after the incubation period. A sequence starting with a Ti precursor injection showed a higher growth rate than a sequence that started with a Pb precursor supply. A PbTi Ox film was deposited on a 3D substrate precoated with an Ir layer to demonstrate the uniformity in film thickness and cation composition. Although the present PbTi Ox process does not have an ideal wide-process window in the cation composition, the PbTi Ox film showed uniform coverage and the distribution of cation composition over the hole structure was within ±10%.

Original languageEnglish
Article number014114
JournalJournal of Applied Physics
Volume101
Issue number1
DOIs
Publication statusPublished - Jan 24 2007

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atomic layer epitaxy
oxides
cations
liquid injection
film thickness
injection

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions. / Watanabe, Takayuki; Hoffmann-Eifert, Susanne; Mi, Shaobo; Jia, Chunlin; Waser, Rainer; Hwang, Cheol Seong.

In: Journal of Applied Physics, Vol. 101, No. 1, 014114, 24.01.2007.

Research output: Contribution to journalArticle

Watanabe, Takayuki ; Hoffmann-Eifert, Susanne ; Mi, Shaobo ; Jia, Chunlin ; Waser, Rainer ; Hwang, Cheol Seong. / Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 1.
@article{c5b7f99899a94ebcbb3b19142a2e22ff,
title = "Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions",
abstract = "Ternary PbTi Ox films were deposited at 240 °C on Pt-covered Si substrates using a combination of liquid injection atomic layer depositions of binary Ti Ox and PbO films. Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] and Pb (C11 H19 O2) 2 [Pb (DPM)2] dissolved in ethylcyclohexane and H2 O were used as source materials. The deposition rates of Pb and Ti were enhanced in the ternary process compared to their binary processes under comparable deposition conditions. The PbTi ratio of PbTi Ox films saturated with an increase in Ti precursor input, while it continued to increase with an increasing Pb precursor input. The self-regulated growth nature of the Pb-O layer in the binary film growth was lost in the mixed PbTi Ox process as a result of interaction with the predeposited Ti-O layer. It was confirmed that for the PbTi Ox film to grow on Pt substrates, an initial incubation period is required. Both Pb-O and Ti-O layers shared a common incubation period of up to ten sequences. The incubation period was shortened by increasing the input of Pb precursor. It was independent of the input of the Ti precursor and the order of precursor supply. This variable incubation period was considered as a potential key issue for growing stoichiometric and uniform multicomponent films over three-dimensional (3D) structures. The order of precursor supply affected the effective deposition rate after the incubation period. A sequence starting with a Ti precursor injection showed a higher growth rate than a sequence that started with a Pb precursor supply. A PbTi Ox film was deposited on a 3D substrate precoated with an Ir layer to demonstrate the uniformity in film thickness and cation composition. Although the present PbTi Ox process does not have an ideal wide-process window in the cation composition, the PbTi Ox film showed uniform coverage and the distribution of cation composition over the hole structure was within ±10{\%}.",
author = "Takayuki Watanabe and Susanne Hoffmann-Eifert and Shaobo Mi and Chunlin Jia and Rainer Waser and Hwang, {Cheol Seong}",
year = "2007",
month = "1",
day = "24",
doi = "10.1063/1.2422777",
language = "English",
volume = "101",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions

AU - Watanabe, Takayuki

AU - Hoffmann-Eifert, Susanne

AU - Mi, Shaobo

AU - Jia, Chunlin

AU - Waser, Rainer

AU - Hwang, Cheol Seong

PY - 2007/1/24

Y1 - 2007/1/24

N2 - Ternary PbTi Ox films were deposited at 240 °C on Pt-covered Si substrates using a combination of liquid injection atomic layer depositions of binary Ti Ox and PbO films. Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] and Pb (C11 H19 O2) 2 [Pb (DPM)2] dissolved in ethylcyclohexane and H2 O were used as source materials. The deposition rates of Pb and Ti were enhanced in the ternary process compared to their binary processes under comparable deposition conditions. The PbTi ratio of PbTi Ox films saturated with an increase in Ti precursor input, while it continued to increase with an increasing Pb precursor input. The self-regulated growth nature of the Pb-O layer in the binary film growth was lost in the mixed PbTi Ox process as a result of interaction with the predeposited Ti-O layer. It was confirmed that for the PbTi Ox film to grow on Pt substrates, an initial incubation period is required. Both Pb-O and Ti-O layers shared a common incubation period of up to ten sequences. The incubation period was shortened by increasing the input of Pb precursor. It was independent of the input of the Ti precursor and the order of precursor supply. This variable incubation period was considered as a potential key issue for growing stoichiometric and uniform multicomponent films over three-dimensional (3D) structures. The order of precursor supply affected the effective deposition rate after the incubation period. A sequence starting with a Ti precursor injection showed a higher growth rate than a sequence that started with a Pb precursor supply. A PbTi Ox film was deposited on a 3D substrate precoated with an Ir layer to demonstrate the uniformity in film thickness and cation composition. Although the present PbTi Ox process does not have an ideal wide-process window in the cation composition, the PbTi Ox film showed uniform coverage and the distribution of cation composition over the hole structure was within ±10%.

AB - Ternary PbTi Ox films were deposited at 240 °C on Pt-covered Si substrates using a combination of liquid injection atomic layer depositions of binary Ti Ox and PbO films. Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] and Pb (C11 H19 O2) 2 [Pb (DPM)2] dissolved in ethylcyclohexane and H2 O were used as source materials. The deposition rates of Pb and Ti were enhanced in the ternary process compared to their binary processes under comparable deposition conditions. The PbTi ratio of PbTi Ox films saturated with an increase in Ti precursor input, while it continued to increase with an increasing Pb precursor input. The self-regulated growth nature of the Pb-O layer in the binary film growth was lost in the mixed PbTi Ox process as a result of interaction with the predeposited Ti-O layer. It was confirmed that for the PbTi Ox film to grow on Pt substrates, an initial incubation period is required. Both Pb-O and Ti-O layers shared a common incubation period of up to ten sequences. The incubation period was shortened by increasing the input of Pb precursor. It was independent of the input of the Ti precursor and the order of precursor supply. This variable incubation period was considered as a potential key issue for growing stoichiometric and uniform multicomponent films over three-dimensional (3D) structures. The order of precursor supply affected the effective deposition rate after the incubation period. A sequence starting with a Ti precursor injection showed a higher growth rate than a sequence that started with a Pb precursor supply. A PbTi Ox film was deposited on a 3D substrate precoated with an Ir layer to demonstrate the uniformity in film thickness and cation composition. Although the present PbTi Ox process does not have an ideal wide-process window in the cation composition, the PbTi Ox film showed uniform coverage and the distribution of cation composition over the hole structure was within ±10%.

UR - http://www.scopus.com/inward/record.url?scp=33846298500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846298500&partnerID=8YFLogxK

U2 - 10.1063/1.2422777

DO - 10.1063/1.2422777

M3 - Article

AN - SCOPUS:33846298500

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 014114

ER -