Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai, A. Koukitu

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl 3 and NH3 as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (PNH3°), and decreased rapidly with increase of PNH3°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.

Original languageEnglish
Pages (from-to)2062-2065
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number7
DOIs
Publication statusPublished - 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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