Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3

Yoshifumi Ikoma, Takao Endo, Fumiya Watanabe, Teruaki Motooka

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Abstract

We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.

Original languageEnglish
Pages (from-to)L301-L303
JournalJapanese Journal of Applied Physics
Volume38
Issue number3B
Publication statusPublished - Jan 1 1999

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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