Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3

Yoshifumi Ikoma, Takao Endo, Fumiya Watanabe, Teruaki Motooka

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.

Original languageEnglish
Pages (from-to)L301-L303
JournalJapanese Journal of Applied Physics
Volume38
Issue number3B
Publication statusPublished - 1999

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free jets
pulses
Epitaxial growth
Film thickness
Surface roughness
Irradiation
Thin films
surface roughness
pulse duration
film thickness
irradiation
thin films

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3. / Ikoma, Yoshifumi; Endo, Takao; Watanabe, Fumiya; Motooka, Teruaki.

In: Japanese Journal of Applied Physics, Vol. 38, No. 3B, 1999, p. L301-L303.

Research output: Contribution to journalArticle

Ikoma, Yoshifumi ; Endo, Takao ; Watanabe, Fumiya ; Motooka, Teruaki. / Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3. In: Japanese Journal of Applied Physics. 1999 ; Vol. 38, No. 3B. pp. L301-L303.
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