Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3

Yoshifumi Ikoma; Takao Endo; Fumiya Watanabe; Teruaki Motooka

Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH₃SiH₃

Yoshifumi Ikoma, Takao Endo, Fumiya Watanabe, Teruaki Motooka

Research output: Contribution to journal › Article › peer-review

Abstract

We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH₃SiH₃). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.

Original language	English
Pages (from-to)	L301-L303
Journal	Japanese Journal of Applied Physics
Volume	38
Issue number	3B
Publication status	Published - Jan 1 1999

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

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title = "Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3",

abstract = "We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.",

author = "Yoshifumi Ikoma and Takao Endo and Fumiya Watanabe and Teruaki Motooka",

year = "1999",

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language = "English",

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T1 - Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3

AU - Ikoma, Yoshifumi

AU - Endo, Takao

AU - Watanabe, Fumiya

AU - Motooka, Teruaki

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.

AB - We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.

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M3 - Article

AN - SCOPUS:85009838641

SN - 0021-4922

VL - 38

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 3B

ER -

Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH₃SiH₃

Abstract

All Science Journal Classification (ASJC) codes

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