Ultrathin SiO 2 films were grown by Si surface irradiation with an O 2 +Ar electron cyclotron resonance (ECR) microwave plasma at low temperatures. These films without hydrogen and silicon deposition were easily grown in a few minutes at low temperatures and at relatively low working pressures (1.0-3.9 X 10 -1 Pa). The promoting growth process of an ultrathin oxidized layer (1-9 nm) was analyzed by in situ Fourier transform infrared reflective absorption spectroscopy. By using the sputter erosion technique, the dependence of x-ray photoelectron spectroscopy on the depth profiling of the films was obtained. The compositional deviations of the films from the stoichiometric SiO 2 were also discussed in the interface region of Si/SiO 2 . This study indicated that an O 2 ECR microwave plasma was efficient to form controlled ultrathin SiO 2 dielectric films. The dependence of the film quality on the working pressure and gas flow rate ratios of the O 2 to Ar was discussed.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)