Growth of ultrathin SiO 2 on Si by surface irradiation with an O 2 +Ar electron cyclotron resonance microwave plasma at low temperatures

Y. C. Liu, L. T. Ho, Y. B. Bai, T. J. Li, K. Furakawa, D. W. Gao, Hiroshi Nakashima, K. Muroaka

    Research output: Contribution to journalArticle

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    Abstract

    Ultrathin SiO 2 films were grown by Si surface irradiation with an O 2 +Ar electron cyclotron resonance (ECR) microwave plasma at low temperatures. These films without hydrogen and silicon deposition were easily grown in a few minutes at low temperatures and at relatively low working pressures (1.0-3.9 X 10 -1 Pa). The promoting growth process of an ultrathin oxidized layer (1-9 nm) was analyzed by in situ Fourier transform infrared reflective absorption spectroscopy. By using the sputter erosion technique, the dependence of x-ray photoelectron spectroscopy on the depth profiling of the films was obtained. The compositional deviations of the films from the stoichiometric SiO 2 were also discussed in the interface region of Si/SiO 2 . This study indicated that an O 2 ECR microwave plasma was efficient to form controlled ultrathin SiO 2 dielectric films. The dependence of the film quality on the working pressure and gas flow rate ratios of the O 2 to Ar was discussed.

    Original languageEnglish
    Pages (from-to)1911-1915
    Number of pages5
    JournalJournal of Applied Physics
    Volume85
    Issue number3
    DOIs
    Publication statusPublished - Jan 1 1999

    Fingerprint

    electron cyclotron resonance
    microwaves
    irradiation
    x ray spectroscopy
    infrared absorption
    erosion
    gas flow
    absorption spectroscopy
    flow velocity
    infrared spectroscopy
    photoelectron spectroscopy
    deviation
    silicon
    hydrogen

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Cite this

    Growth of ultrathin SiO 2 on Si by surface irradiation with an O 2 +Ar electron cyclotron resonance microwave plasma at low temperatures . / Liu, Y. C.; Ho, L. T.; Bai, Y. B.; Li, T. J.; Furakawa, K.; Gao, D. W.; Nakashima, Hiroshi; Muroaka, K.

    In: Journal of Applied Physics, Vol. 85, No. 3, 01.01.1999, p. 1911-1915.

    Research output: Contribution to journalArticle

    Liu, Y. C. ; Ho, L. T. ; Bai, Y. B. ; Li, T. J. ; Furakawa, K. ; Gao, D. W. ; Nakashima, Hiroshi ; Muroaka, K. / Growth of ultrathin SiO 2 on Si by surface irradiation with an O 2 +Ar electron cyclotron resonance microwave plasma at low temperatures In: Journal of Applied Physics. 1999 ; Vol. 85, No. 3. pp. 1911-1915.
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    abstract = "Ultrathin SiO 2 films were grown by Si surface irradiation with an O 2 +Ar electron cyclotron resonance (ECR) microwave plasma at low temperatures. These films without hydrogen and silicon deposition were easily grown in a few minutes at low temperatures and at relatively low working pressures (1.0-3.9 X 10 -1 Pa). The promoting growth process of an ultrathin oxidized layer (1-9 nm) was analyzed by in situ Fourier transform infrared reflective absorption spectroscopy. By using the sputter erosion technique, the dependence of x-ray photoelectron spectroscopy on the depth profiling of the films was obtained. The compositional deviations of the films from the stoichiometric SiO 2 were also discussed in the interface region of Si/SiO 2 . This study indicated that an O 2 ECR microwave plasma was efficient to form controlled ultrathin SiO 2 dielectric films. The dependence of the film quality on the working pressure and gas flow rate ratios of the O 2 to Ar was discussed.",
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    AU - Ho, L. T.

    AU - Bai, Y. B.

    AU - Li, T. J.

    AU - Furakawa, K.

    AU - Gao, D. W.

    AU - Nakashima, Hiroshi

    AU - Muroaka, K.

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    N2 - Ultrathin SiO 2 films were grown by Si surface irradiation with an O 2 +Ar electron cyclotron resonance (ECR) microwave plasma at low temperatures. These films without hydrogen and silicon deposition were easily grown in a few minutes at low temperatures and at relatively low working pressures (1.0-3.9 X 10 -1 Pa). The promoting growth process of an ultrathin oxidized layer (1-9 nm) was analyzed by in situ Fourier transform infrared reflective absorption spectroscopy. By using the sputter erosion technique, the dependence of x-ray photoelectron spectroscopy on the depth profiling of the films was obtained. The compositional deviations of the films from the stoichiometric SiO 2 were also discussed in the interface region of Si/SiO 2 . This study indicated that an O 2 ECR microwave plasma was efficient to form controlled ultrathin SiO 2 dielectric films. The dependence of the film quality on the working pressure and gas flow rate ratios of the O 2 to Ar was discussed.

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