Growth of ZnO nanorod with high-quality assisted by an external electric field

Min Kyu Son, Hyunwoong Seo, Soo Kyoung Kim, Na Yeong Hong, Byung Man Kim, Songyi Park, Hee Je Kim

Research output: Contribution to journalArticle

Abstract

In this study, the ZnO nanorod is grown on the seed layered glass substrate by applying an external electric field to fabricate the ZnO nanorod with the high quality and to increase the yield of the ZnO nanorod. It is possible to grow the definite and clear hexagonal ZnO nanorod as the cathode of the high voltage is connected to the side of the seed layered glass substrate and the anode is connected to the opposite side because more Zn2+ ions are located around the ZnO seed layer and are accumulated easily due to the external electric field. As a result, it is succeeded to fabricate the definite hexagonal ZnO nanorod having better structural characteristics by applying the external electric field during the growth process. Therefore, it is demonstrated that the external electric field is effective to fabricate the high quality ZnO nanorod without changing any composition of the ZnO nanorod.

Original languageEnglish
Pages (from-to)1641-1645
Number of pages5
JournalTransactions of the Korean Institute of Electrical Engineers
Volume61
Issue number11
DOIs
Publication statusPublished - Nov 1 2012

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Nanorods
Electric fields
Seed
Glass
Substrates
Anodes
Cathodes
Ions
Electric potential
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Growth of ZnO nanorod with high-quality assisted by an external electric field. / Son, Min Kyu; Seo, Hyunwoong; Kim, Soo Kyoung; Hong, Na Yeong; Kim, Byung Man; Park, Songyi; Kim, Hee Je.

In: Transactions of the Korean Institute of Electrical Engineers, Vol. 61, No. 11, 01.11.2012, p. 1641-1645.

Research output: Contribution to journalArticle

Son, Min Kyu ; Seo, Hyunwoong ; Kim, Soo Kyoung ; Hong, Na Yeong ; Kim, Byung Man ; Park, Songyi ; Kim, Hee Je. / Growth of ZnO nanorod with high-quality assisted by an external electric field. In: Transactions of the Korean Institute of Electrical Engineers. 2012 ; Vol. 61, No. 11. pp. 1641-1645.
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