H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

Juan Paolo S. Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Contribution to journalArticle

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Abstract

We report the fabrication of high mobility amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) irradiated by a single shot of a 248 nm KrF excimer laser. Very high mobilities (μ) of up to 43.5 cm2/V s were obtained after the low temperature excimer laser annealing (ELA) process. ELA induces high temperatures primarily in the upper layers and maintains very low temperatures of less than 50 °C in the substrate region. Scanning Transmission Electron micrographs show no laser induced damage and clear interfaces after the laser irradiation. In addition, several characterization studies were performed to determine the μ improvement mechanism. The analysis of Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy suggests incorporation of H mainly from the hybrid passivation layer into the channel. Moreover, Energy-dispersive X-ray Spectroscopy results show that Au diffused into the channel after ELA. Both KrF ELA-induced H and Au diffusion contributed to the higher μ. These results demonstrate that ELA can greatly enhance the electrical properties of a-IGZO TFTs for promising applications in large area, transparent, and flexible electronics.

Original languageEnglish
Article number133503
JournalApplied Physics Letters
Volume110
Issue number13
DOIs
Publication statusPublished - Mar 27 2017

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laser annealing
excimer lasers
transistors
thin films
secondary ion mass spectrometry
passivity
shot
lasers
x rays
electrical properties
photoelectron spectroscopy
damage
fabrication
irradiation
scanning
electronics
spectroscopy
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing. / Bermundo, Juan Paolo S.; Ishikawa, Yasuaki; Fujii, Mami N.; Ikenoue, Hiroshi; Uraoka, Yukiharu.

In: Applied Physics Letters, Vol. 110, No. 13, 133503, 27.03.2017.

Research output: Contribution to journalArticle

Bermundo, Juan Paolo S. ; Ishikawa, Yasuaki ; Fujii, Mami N. ; Ikenoue, Hiroshi ; Uraoka, Yukiharu. / H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing. In: Applied Physics Letters. 2017 ; Vol. 110, No. 13.
@article{e3cb47d2c1464d1e9b518a8f7c3cf922,
title = "H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing",
abstract = "We report the fabrication of high mobility amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) irradiated by a single shot of a 248 nm KrF excimer laser. Very high mobilities (μ) of up to 43.5 cm2/V s were obtained after the low temperature excimer laser annealing (ELA) process. ELA induces high temperatures primarily in the upper layers and maintains very low temperatures of less than 50 °C in the substrate region. Scanning Transmission Electron micrographs show no laser induced damage and clear interfaces after the laser irradiation. In addition, several characterization studies were performed to determine the μ improvement mechanism. The analysis of Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy suggests incorporation of H mainly from the hybrid passivation layer into the channel. Moreover, Energy-dispersive X-ray Spectroscopy results show that Au diffused into the channel after ELA. Both KrF ELA-induced H and Au diffusion contributed to the higher μ. These results demonstrate that ELA can greatly enhance the electrical properties of a-IGZO TFTs for promising applications in large area, transparent, and flexible electronics.",
author = "Bermundo, {Juan Paolo S.} and Yasuaki Ishikawa and Fujii, {Mami N.} and Hiroshi Ikenoue and Yukiharu Uraoka",
year = "2017",
month = "3",
day = "27",
doi = "10.1063/1.4979319",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

AU - Bermundo, Juan Paolo S.

AU - Ishikawa, Yasuaki

AU - Fujii, Mami N.

AU - Ikenoue, Hiroshi

AU - Uraoka, Yukiharu

PY - 2017/3/27

Y1 - 2017/3/27

N2 - We report the fabrication of high mobility amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) irradiated by a single shot of a 248 nm KrF excimer laser. Very high mobilities (μ) of up to 43.5 cm2/V s were obtained after the low temperature excimer laser annealing (ELA) process. ELA induces high temperatures primarily in the upper layers and maintains very low temperatures of less than 50 °C in the substrate region. Scanning Transmission Electron micrographs show no laser induced damage and clear interfaces after the laser irradiation. In addition, several characterization studies were performed to determine the μ improvement mechanism. The analysis of Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy suggests incorporation of H mainly from the hybrid passivation layer into the channel. Moreover, Energy-dispersive X-ray Spectroscopy results show that Au diffused into the channel after ELA. Both KrF ELA-induced H and Au diffusion contributed to the higher μ. These results demonstrate that ELA can greatly enhance the electrical properties of a-IGZO TFTs for promising applications in large area, transparent, and flexible electronics.

AB - We report the fabrication of high mobility amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) irradiated by a single shot of a 248 nm KrF excimer laser. Very high mobilities (μ) of up to 43.5 cm2/V s were obtained after the low temperature excimer laser annealing (ELA) process. ELA induces high temperatures primarily in the upper layers and maintains very low temperatures of less than 50 °C in the substrate region. Scanning Transmission Electron micrographs show no laser induced damage and clear interfaces after the laser irradiation. In addition, several characterization studies were performed to determine the μ improvement mechanism. The analysis of Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy suggests incorporation of H mainly from the hybrid passivation layer into the channel. Moreover, Energy-dispersive X-ray Spectroscopy results show that Au diffused into the channel after ELA. Both KrF ELA-induced H and Au diffusion contributed to the higher μ. These results demonstrate that ELA can greatly enhance the electrical properties of a-IGZO TFTs for promising applications in large area, transparent, and flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=85016490165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016490165&partnerID=8YFLogxK

U2 - 10.1063/1.4979319

DO - 10.1063/1.4979319

M3 - Article

AN - SCOPUS:85016490165

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 133503

ER -