H assisted control of quality and conformality in Cu film deposition using plasma CVD method

Masaharu Shiratani, Hong Jie Jin, Kosuke Takenaka, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Hydrogen assisted plasma CVD (HAPCVD), in which Cu(hfac)2 is supplied as the source material, realizes control of quality and conformality in Cu fill deposition, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while decrease in dissociation degree of Cu(hfac)2 leads to realize conformal deposition in fine trenches. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we propose a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also have demonstrated conformal deposition of smooth Cu films of 30 nm in thickness and 1.9 μΩcm in resistivity in trenches using the HAPCVD.

Original languageEnglish
Pages (from-to)271-278
Number of pages8
JournalUnknown Journal
Publication statusPublished - 2000

Fingerprint

Plasma CVD
plasma
trench
Hydrogen
hydrogen
infill
surface roughness
electrical resistivity
irradiation
Deposits
grain size
Surface roughness
Irradiation
method

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

H assisted control of quality and conformality in Cu film deposition using plasma CVD method. / Shiratani, Masaharu; Jin, Hong Jie; Takenaka, Kosuke; Koga, Kazunori; Kinoshita, Toshio; Watanabe, Yukio.

In: Unknown Journal, 2000, p. 271-278.

Research output: Contribution to journalArticle

@article{fd13c529b63b4da3b412bb51b6b5f1bd,
title = "H assisted control of quality and conformality in Cu film deposition using plasma CVD method",
abstract = "Hydrogen assisted plasma CVD (HAPCVD), in which Cu(hfac)2 is supplied as the source material, realizes control of quality and conformality in Cu fill deposition, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while decrease in dissociation degree of Cu(hfac)2 leads to realize conformal deposition in fine trenches. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we propose a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also have demonstrated conformal deposition of smooth Cu films of 30 nm in thickness and 1.9 μΩcm in resistivity in trenches using the HAPCVD.",
author = "Masaharu Shiratani and Jin, {Hong Jie} and Kosuke Takenaka and Kazunori Koga and Toshio Kinoshita and Yukio Watanabe",
year = "2000",
language = "English",
pages = "271--278",
journal = "Quaternary International",
issn = "1040-6182",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - H assisted control of quality and conformality in Cu film deposition using plasma CVD method

AU - Shiratani, Masaharu

AU - Jin, Hong Jie

AU - Takenaka, Kosuke

AU - Koga, Kazunori

AU - Kinoshita, Toshio

AU - Watanabe, Yukio

PY - 2000

Y1 - 2000

N2 - Hydrogen assisted plasma CVD (HAPCVD), in which Cu(hfac)2 is supplied as the source material, realizes control of quality and conformality in Cu fill deposition, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while decrease in dissociation degree of Cu(hfac)2 leads to realize conformal deposition in fine trenches. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we propose a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also have demonstrated conformal deposition of smooth Cu films of 30 nm in thickness and 1.9 μΩcm in resistivity in trenches using the HAPCVD.

AB - Hydrogen assisted plasma CVD (HAPCVD), in which Cu(hfac)2 is supplied as the source material, realizes control of quality and conformality in Cu fill deposition, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while decrease in dissociation degree of Cu(hfac)2 leads to realize conformal deposition in fine trenches. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we propose a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also have demonstrated conformal deposition of smooth Cu films of 30 nm in thickness and 1.9 μΩcm in resistivity in trenches using the HAPCVD.

UR - http://www.scopus.com/inward/record.url?scp=0034460825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034460825&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034460825

SP - 271

EP - 278

JO - Quaternary International

JF - Quaternary International

SN - 1040-6182

ER -