H assisted control of quality and conformality in Cu film deposition using plasma CVD method

Masaharu Shiratani, Hong Jie Jin, Kosuke Takenaka, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Hydrogen assisted plasma CVD (HAPCVD), in which Cu(hfac)2 is supplied as the source material, realizes control of quality and conformality in Cu fill deposition, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while decrease in dissociation degree of Cu(hfac)2 leads to realize conformal deposition in fine trenches. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we propose a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also have demonstrated conformal deposition of smooth Cu films of 30 nm in thickness and 1.9 μΩcm in resistivity in trenches using the HAPCVD.

Original languageEnglish
Pages (from-to)271-278
Number of pages8
JournalUnknown Journal
Publication statusPublished - 2000

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Fingerprint Dive into the research topics of 'H assisted control of quality and conformality in Cu film deposition using plasma CVD method'. Together they form a unique fingerprint.

Cite this