H-assisted plasma CVD of Cu films for interconnects in ultra-large-scale integration

Masaharu Shiratani, Hong Jie Jin, Kosuke Takenaka, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

H-assisted plasma CVD (HAPCVD), in which Cu(hfac)2 is supplied as the source material, realizes control of qualities of Cu films, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness. Conformal deposition in fine trenches can be realized by decreasing dissociation degree of Cu(hfac)2 using the HAPCVD. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we proposed a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also demonstrated conformal deposition of smooth Cu films of 30 nm thickness and 1.9 μΩ cm resistivity and almost complete Cu filling in trenches 0.35 μm wide and 1.6 μm deep using the HAPCVD.

Original languageEnglish
Pages (from-to)505-515
Number of pages11
JournalScience and Technology of Advanced Materials
Volume2
Issue number3-4
DOIs
Publication statusPublished - Sep 12 2001

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ULSI circuits
Plasma CVD
Deposits
Surface roughness
Irradiation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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H-assisted plasma CVD of Cu films for interconnects in ultra-large-scale integration. / Shiratani, Masaharu; Jin, Hong Jie; Takenaka, Kosuke; Koga, Kazunori; Kinoshita, Toshio; Watanabe, Yukio.

In: Science and Technology of Advanced Materials, Vol. 2, No. 3-4, 12.09.2001, p. 505-515.

Research output: Contribution to journalArticle

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AU - Watanabe, Yukio

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