Healing defects in SiC wafers by liquid-phase epitaxy in Si melts

M. Nasir Khan, Shinichi Nishizawa, Kazuo Arai

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Silicon carbide epitaxial layers were grown by liquid-phase epitaxy on 6H-SiC-modified Lely crystals containing a high density of micropipes (MP) and other defects. The geometrical configuration of the seed crystals inside the crucible during LPE was such that the epitaxial layer growth occurred simultaneously on both the faces of the seed crystals. Layers in the range of 20-30μm thickness were deposited on both the faces of the crystals. X-ray diffraction, optical and scanning electron microscopy analyses were carried out to investigate these layers. It was found that dislocation and MP density in the substrate after LPE growth has been significantly reduced. Several MP were observed to decompose into non-hollow core dislocations. The growth centre associated with MP reduces in size in general and shifts to new centres due to the decomposition of the MP. As a result these new centres dominate the growing surfaces in LPE and make the healed MP completely invisible.

Original languageEnglish
Pages (from-to)137-143
Number of pages7
JournalJournal of Crystal Growth
Volume254
Issue number1-2
DOIs
Publication statusPublished - Jun 1 2003

Fingerprint

Liquid phase epitaxy
liquid phase epitaxy
healing
wafers
Defects
Crystals
defects
Epitaxial layers
crystals
seeds
Crucibles
crucibles
Silicon carbide
silicon carbides
Decomposition
decomposition
X ray diffraction
Scanning electron microscopy
scanning electron microscopy
shift

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Healing defects in SiC wafers by liquid-phase epitaxy in Si melts. / Nasir Khan, M.; Nishizawa, Shinichi; Arai, Kazuo.

In: Journal of Crystal Growth, Vol. 254, No. 1-2, 01.06.2003, p. 137-143.

Research output: Contribution to journalArticle

Nasir Khan, M. ; Nishizawa, Shinichi ; Arai, Kazuo. / Healing defects in SiC wafers by liquid-phase epitaxy in Si melts. In: Journal of Crystal Growth. 2003 ; Vol. 254, No. 1-2. pp. 137-143.
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