Heat and impurity transfer mechanisms of Czochralski and directional solidification processes

Koichi Kakimoto; X. J. Chen; L. J. Liu; H. Miyazawa; H. Matsuo; S. Nakano; S. Hisamatsu; Y. Kangawa

doi:10.1149/1.3096556

Heat and impurity transfer mechanisms of Czochralski and directional solidification processes

Koichi Kakimoto, X. J. Chen, L. J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu, Y. Kangawa

Division of Renewable Energy Dynamics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a remelting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.

Original language	English
Title of host publication	ECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages	925-933
Number of pages	9
Edition	1 PART 2
DOIs	https://doi.org/10.1149/1.3096556
Publication status	Published - 2009
Event	ISTC/CSTIC 2009 (CISTC) - Shanghai, China Duration: Mar 19 2009 → Mar 20 2009

Publication series

Name	ECS Transactions
Number	1 PART 2
Volume	18
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	ISTC/CSTIC 2009 (CISTC)
Country/Territory	China
City	Shanghai
Period	3/19/09 → 3/20/09

All Science Journal Classification (ASJC) codes

Engineering(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3096556

Cite this

Kakimoto, K, Chen, XJ, Liu, LJ, Miyazawa, H, Matsuo, H, Nakano, S, Hisamatsu, S & Kangawa, Y 2009, Heat and impurity transfer mechanisms of Czochralski and directional solidification processes. in ECS Transactions - ISTC/CSTIC 2009 (CISTC). 1 PART 2 edn, ECS Transactions, no. 1 PART 2, vol. 18, pp. 925-933, ISTC/CSTIC 2009 (CISTC), Shanghai, China, 3/19/09. https://doi.org/10.1149/1.3096556

@inproceedings{28641b6767bb4f3694dcaa2db7716226,

title = "Heat and impurity transfer mechanisms of Czochralski and directional solidification processes",

abstract = "In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a remelting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.",

author = "Koichi Kakimoto and Chen, {X. J.} and Liu, {L. J.} and H. Miyazawa and H. Matsuo and S. Nakano and S. Hisamatsu and Y. Kangawa",

year = "2009",

doi = "10.1149/1.3096556",

language = "English",

isbn = "9781615676460",

series = "ECS Transactions",

number = "1 PART 2",

pages = "925--933",

booktitle = "ECS Transactions - ISTC/CSTIC 2009 (CISTC)",

edition = "1 PART 2",

note = "ISTC/CSTIC 2009 (CISTC) ; Conference date: 19-03-2009 Through 20-03-2009",

}

TY - GEN

T1 - Heat and impurity transfer mechanisms of Czochralski and directional solidification processes

AU - Kakimoto, Koichi

AU - Chen, X. J.

AU - Liu, L. J.

AU - Miyazawa, H.

AU - Matsuo, H.

AU - Nakano, S.

AU - Hisamatsu, S.

AU - Kangawa, Y.

PY - 2009

Y1 - 2009

N2 - In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a remelting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.

AB - In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a remelting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=77950636183&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950636183&partnerID=8YFLogxK

U2 - 10.1149/1.3096556

DO - 10.1149/1.3096556

M3 - Conference contribution

AN - SCOPUS:77950636183

SN - 9781615676460

T3 - ECS Transactions

SP - 925

EP - 933

BT - ECS Transactions - ISTC/CSTIC 2009 (CISTC)

T2 - ISTC/CSTIC 2009 (CISTC)

Y2 - 19 March 2009 through 20 March 2009

ER -

Heat and impurity transfer mechanisms of Czochralski and directional solidification processes

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this