In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a remelting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.