Heat and impurity transfer mechanisms of Czochralski and directional solidification processes

K. Kakimoto, X. J. Chen, L. J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu, Y. Kangawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a remelting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.

Original languageEnglish
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages925-933
Number of pages9
Edition1 PART 2
DOIs
Publication statusPublished - Dec 1 2009
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: Mar 19 2009Mar 20 2009

Publication series

NameECS Transactions
Number1 PART 2
Volume18
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherISTC/CSTIC 2009 (CISTC)
CountryChina
CityShanghai
Period3/19/093/20/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Heat and impurity transfer mechanisms of Czochralski and directional solidification processes'. Together they form a unique fingerprint.

Cite this