Abstract
Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat–electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat–electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8AuxSi46−x clathrate. Single-crystal Ba8AuxSi46−x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.
| Original language | English |
|---|---|
| Pages (from-to) | 3273-3276 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 47 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 1 2018 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Heat–Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8AuxSi46−x Clathrate with Au Compositional Gradient. / Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko.
In: Journal of Electronic Materials, Vol. 47, No. 6, 01.06.2018, p. 3273-3276.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Heat–Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8AuxSi46−x Clathrate with Au Compositional Gradient
AU - Osakabe, Yuki
AU - Tatsumi, Shota
AU - Kotsubo, Yuichi
AU - Iwanaga, Junpei
AU - Yamasoto, Keita
AU - Munetoh, Shinji
AU - Furukimi, Osamu
AU - Nakashima, Kunihiko
PY - 2018/6/1
Y1 - 2018/6/1
N2 - Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat–electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat–electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8AuxSi46−x clathrate. Single-crystal Ba8AuxSi46−x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.
AB - Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat–electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat–electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8AuxSi46−x clathrate. Single-crystal Ba8AuxSi46−x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.
UR - http://www.scopus.com/inward/record.url?scp=85042217279&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85042217279&partnerID=8YFLogxK
U2 - 10.1007/s11664-018-6115-y
DO - 10.1007/s11664-018-6115-y
M3 - Article
VL - 47
SP - 3273
EP - 3276
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 6
ER -