Heating rate dependence of melting of silicon: An in situ x-ray topography study

Yuren Wang, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

In situ observations of the melting processes of dislocation-free silicon crystals were carried out using x-ray topography technique. Heating procedures with various heating rates were used in the experiments. Dot contrasts were observed during the melting process at a high heating rate, while they could not be found at a low heating rate. It was found that the melting process at a high heating rate is spatially inhomogeneous, while that at a low heating rate is homogeneous. It was also found that the oxygen concentration in the sample plays an important role in the formation of dot contrasts during the melting process. The dot contrasts were assumed to originate from the dislocation loops around the oxygen precipitates.

Original languageEnglish
Pages (from-to)2247-2251
Number of pages5
JournalJournal of Applied Physics
Volume90
Issue number5
DOIs
Publication statusPublished - Sep 1 2001

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topography
melting
heating
silicon
x rays
oxygen
precipitates
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Heating rate dependence of melting of silicon : An in situ x-ray topography study. / Wang, Yuren; Kakimoto, Koichi.

In: Journal of Applied Physics, Vol. 90, No. 5, 01.09.2001, p. 2247-2251.

Research output: Contribution to journalArticle

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