Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

Naoki Furuhata, Koichi Kakimoto, Masaji Yoshida, Taibun Kamejima

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23 Citations (Scopus)

Abstract

Heavily Si-doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low-temperature Fourier transformation infrared spectroscopy (FTIR) method. The carrier concentration has no growth temperature dependence from 550 to 700 °C temperature range. However, it has temperature dependence below 550 °C and above 700 °C. The carrier concentration of Si-doped GaAs is usually saturated at 6×10 18 cm-3 level. Further, Si doping makes the carrier concentration decrease. By using the low-temperature FTIR method, absorption bands for SiGa, SiAs, Si Ga-SiAs pair, and lower energy bands (374 and 369 cm -1) were observed in heavily Si-doped GaAs. The peak intensity for SiGa is smaller than that for SiAs, and the peak heights at 374 and 369 cm-1 are relatively larger than that for the other peaks. These facts suggest that, in heavily Si-doped GaAs, a part of SiGa formed SiGa related defects, which act as new donor centers.

Original languageEnglish
Pages (from-to)4692-4695
Number of pages4
JournalJournal of Applied Physics
Volume64
Issue number9
DOIs
Publication statusPublished - Dec 1 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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