Hetero-epitaxial growth of YBCO thin films on the A-cut plane sapphire substrates

S. Ohshima, M. Shirakawa, T. Nishimura, A. Saito, M. Mukaida

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We examined the hetero-epitaxial growth of YBCO thin films on the a-cut plane sapphire substrates for the passive microwave applications, because the a-cut plane sapphire substrates have smaller in-plane anisotropy of the dielectric constant compared with that of r-cut plane sapphire substrates. The CeO2 buffer layers and YBCO thin films were prepared by an inductive-coupled plasma sputtering method. We found that perfect in-plane alignment of the CeO2 buffer layer could be obtained on the a-cut plane sapphire substrates. Also we could obtain the hetero-epitaxial YBCO thin films on CeO2/a-cut plane sapphire substrates. Tc of the YBCO thin films was approximately 89 K, and the surface resistance (Rs) of the YBCO thin films was approximately 1 mΩ at 50 K and at 22 GHz, equivalently to values for YBCO thin films fabricated on the r-cut plane sapphire substrates.

Original languageEnglish
Pages (from-to)2985-2988
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume15
Issue number2 PART III
DOIs
Publication statusPublished - Jun 1 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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