Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

Tomohiro Yoshida, Yutaro Ueda, Takeshi Daio, Aki Tominaga, Toshihiro Okajima, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    β-AIN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AIN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Horizontally oriented growth of β-AIN(111) was confirmed by XRD in 2θ-θ scan. The epitaxial relationship between β-AIN and sapphire was derived to be β-AIN(111)[121] || sapphire (0001)[1120] from the TEM measurement. The existence of dislocation defects was implied from the electron diffraction pattern of the film. The heteroepitaxial growth probably occurs in domain match epitaxy, accompanied by the generation of dislocations defects at the interface.

    Original languageEnglish
    Article number06FJ05
    JournalJapanese journal of applied physics
    Volume54
    Issue number6
    DOIs
    Publication statusPublished - Jun 1 2015

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition'. Together they form a unique fingerprint.

    Cite this