Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition

Tomohiro Yoshida, Yutaro Ueda, Takeshi Daio, Aki Tominaga, Toshihiro Okajima, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    β-AIN thin films were heteroepitaxially grown on sapphire (0001) substrates with a smooth surface showing steps in nitrogen atmospheres by pulsed laser deposition using sintered AIN targets, and their films were structurally studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Horizontally oriented growth of β-AIN(111) was confirmed by XRD in 2θ-θ scan. The epitaxial relationship between β-AIN and sapphire was derived to be β-AIN(111)[121] || sapphire (0001)[1120] from the TEM measurement. The existence of dislocation defects was implied from the electron diffraction pattern of the film. The heteroepitaxial growth probably occurs in domain match epitaxy, accompanied by the generation of dislocations defects at the interface.

    Original languageEnglish
    Article number06FJ05
    JournalJapanese Journal of Applied Physics
    Volume54
    Issue number6
    DOIs
    Publication statusPublished - Jun 1 2015

    Fingerprint

    laser deposition
    Epitaxial growth
    Sapphire
    Laser pulses
    sapphire
    Nitrogen
    nitrogen
    atmospheres
    pulses
    Transmission electron microscopy
    X ray diffraction
    Defects
    transmission electron microscopy
    defects
    Pulsed laser deposition
    Dislocations (crystals)
    diffraction
    Electron diffraction
    epitaxy
    Diffraction patterns

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition. / Yoshida, Tomohiro; Ueda, Yutaro; Daio, Takeshi; Tominaga, Aki; Okajima, Toshihiro; Yoshitake, Tsuyoshi.

    In: Japanese Journal of Applied Physics, Vol. 54, No. 6, 06FJ05, 01.06.2015.

    Research output: Contribution to journalArticle

    Yoshida, Tomohiro ; Ueda, Yutaro ; Daio, Takeshi ; Tominaga, Aki ; Okajima, Toshihiro ; Yoshitake, Tsuyoshi. / Heteroepitaxial growth of β-AIN films on sapphire (0001) in nitrogen atmospheres by pulse laser deposition. In: Japanese Journal of Applied Physics. 2015 ; Vol. 54, No. 6.
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    AU - Tominaga, Aki

    AU - Okajima, Toshihiro

    AU - Yoshitake, Tsuyoshi

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