Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition

Toshiki Tsubota, Masanari Ohta, Katsuki Kusakabe, Shigeharu Morooka, Midori Watanabe, Hideaki Maeda

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

An iridium (100) layer was epitaxially coated on a MgO (100) plate by sputtering at 1123 K, and was then utilized in the formation of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane as the carbon source. The electric contact between the substrate and holder was confirmed by coating the entire MgO surface with iridium. The iridium substrate was then treated by bias-enhanced nucleation under optimized conditions. It was found that diamond particles formed by MPCVD were essentially oriented to the iridium substrate. The diamond particles were then grown to the 〈100〉 and further to the 〈111〉, and a smooth diamond film was obtained. The full width at half maximum of the (400) rocking curve of the diamond film was 0.16°, which was close to that of a diamond single crystal.

Original languageEnglish
Pages (from-to)1380-1387
Number of pages8
JournalDiamond and Related Materials
Volume9
Issue number7
DOIs
Publication statusPublished - Jul 3 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this