Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition

Toshiki Tsubota, Masanari Ohta, Katsuki Kusakabe, Shigeharu Morooka, Midori Watanabe, Hideaki Maeda

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

An iridium (100) layer was epitaxially coated on a MgO (100) plate by sputtering at 1123 K, and was then utilized in the formation of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane as the carbon source. The electric contact between the substrate and holder was confirmed by coating the entire MgO surface with iridium. The iridium substrate was then treated by bias-enhanced nucleation under optimized conditions. It was found that diamond particles formed by MPCVD were essentially oriented to the iridium substrate. The diamond particles were then grown to the 〈100〉 and further to the 〈111〉, and a smooth diamond film was obtained. The full width at half maximum of the (400) rocking curve of the diamond film was 0.16°, which was close to that of a diamond single crystal.

Original languageEnglish
Pages (from-to)1380-1387
Number of pages8
JournalDiamond and Related Materials
Volume9
Issue number7
DOIs
Publication statusPublished - Jul 3 2000

Fingerprint

Iridium
Diamond
iridium
Epitaxial growth
Chemical vapor deposition
Diamonds
diamonds
Microwaves
vapor deposition
Plasmas
microwaves
Diamond films
Substrates
diamond films
Electric contacts
Methane
holders
Full width at half maximum
Sputtering
electric contacts

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition. / Tsubota, Toshiki; Ohta, Masanari; Kusakabe, Katsuki; Morooka, Shigeharu; Watanabe, Midori; Maeda, Hideaki.

In: Diamond and Related Materials, Vol. 9, No. 7, 03.07.2000, p. 1380-1387.

Research output: Contribution to journalArticle

Tsubota, Toshiki ; Ohta, Masanari ; Kusakabe, Katsuki ; Morooka, Shigeharu ; Watanabe, Midori ; Maeda, Hideaki. / Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition. In: Diamond and Related Materials. 2000 ; Vol. 9, No. 7. pp. 1380-1387.
@article{81ca30eaf0ec42c194e87f9599d626bb,
title = "Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition",
abstract = "An iridium (100) layer was epitaxially coated on a MgO (100) plate by sputtering at 1123 K, and was then utilized in the formation of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane as the carbon source. The electric contact between the substrate and holder was confirmed by coating the entire MgO surface with iridium. The iridium substrate was then treated by bias-enhanced nucleation under optimized conditions. It was found that diamond particles formed by MPCVD were essentially oriented to the iridium substrate. The diamond particles were then grown to the 〈100〉 and further to the 〈111〉, and a smooth diamond film was obtained. The full width at half maximum of the (400) rocking curve of the diamond film was 0.16°, which was close to that of a diamond single crystal.",
author = "Toshiki Tsubota and Masanari Ohta and Katsuki Kusakabe and Shigeharu Morooka and Midori Watanabe and Hideaki Maeda",
year = "2000",
month = "7",
day = "3",
doi = "10.1016/S0925-9635(00)00263-6",
language = "English",
volume = "9",
pages = "1380--1387",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "7",

}

TY - JOUR

T1 - Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition

AU - Tsubota, Toshiki

AU - Ohta, Masanari

AU - Kusakabe, Katsuki

AU - Morooka, Shigeharu

AU - Watanabe, Midori

AU - Maeda, Hideaki

PY - 2000/7/3

Y1 - 2000/7/3

N2 - An iridium (100) layer was epitaxially coated on a MgO (100) plate by sputtering at 1123 K, and was then utilized in the formation of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane as the carbon source. The electric contact between the substrate and holder was confirmed by coating the entire MgO surface with iridium. The iridium substrate was then treated by bias-enhanced nucleation under optimized conditions. It was found that diamond particles formed by MPCVD were essentially oriented to the iridium substrate. The diamond particles were then grown to the 〈100〉 and further to the 〈111〉, and a smooth diamond film was obtained. The full width at half maximum of the (400) rocking curve of the diamond film was 0.16°, which was close to that of a diamond single crystal.

AB - An iridium (100) layer was epitaxially coated on a MgO (100) plate by sputtering at 1123 K, and was then utilized in the formation of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane as the carbon source. The electric contact between the substrate and holder was confirmed by coating the entire MgO surface with iridium. The iridium substrate was then treated by bias-enhanced nucleation under optimized conditions. It was found that diamond particles formed by MPCVD were essentially oriented to the iridium substrate. The diamond particles were then grown to the 〈100〉 and further to the 〈111〉, and a smooth diamond film was obtained. The full width at half maximum of the (400) rocking curve of the diamond film was 0.16°, which was close to that of a diamond single crystal.

UR - http://www.scopus.com/inward/record.url?scp=0033705516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033705516&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(00)00263-6

DO - 10.1016/S0925-9635(00)00263-6

M3 - Article

VL - 9

SP - 1380

EP - 1387

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 7

ER -