Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

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2 Citations (Scopus)


Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measure-ments and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates arc discussed based on results obtained from cross-sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)1784-1788
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number10 R
Publication statusPublished - Oct 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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