Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measure-ments and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates arc discussed based on results obtained from cross-sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)1784-1788
Number of pages5
JournalJapanese Journal of Applied Physics
Volume28
Issue number10 R
DOIs
Publication statusPublished - Oct 1989

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Heteroepitaxial growth of gaas films on caf<sub>2</sub>/si(511) structures prepared with rapid thermal annealing'. Together they form a unique fingerprint.

Cite this