Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measure-ments and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates arc discussed based on results obtained from cross-sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)1784-1788
Number of pages5
JournalJapanese Journal of Applied Physics
Volume28
Issue number10 R
DOIs
Publication statusPublished - Oct 1989

Fingerprint

Rapid thermal annealing
Epitaxial growth
annealing
Crystalline materials
Transmission electron microscopy
Vacuum evaporation
transmission electron microscopy
Substrates
replicas
Molecular beam epitaxy
molecular beam epitaxy
arcs
evaporation
Annealing
Defects
vacuum
defects
Ions
ions

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing. / Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

In: Japanese Journal of Applied Physics, Vol. 28, No. 10 R, 10.1989, p. 1784-1788.

Research output: Contribution to journalArticle

Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing. In: Japanese Journal of Applied Physics. 1989 ; Vol. 28, No. 10 R. pp. 1784-1788.
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