Heterojunction diodes comprised of n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite

Shinya Ohmagari, Sausan Al-Riyami, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Heterojunction diodes comprised of p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) and n-type Si, wherein 3 at.% boron-doped UNCD/a-C:H films were deposited on Si substrates by pulsed laser deposition, were electrically studied. The current-voltage (I-V) characteristics showed the typical rectification action with a leakage current density of 4.7 × 10-5 A/cm2 at a reverse voltage of -1 V. The carrier transport is expected to be in generation-recombination process accompanied by tunneling at low forward voltages of 0.1-0.5 V, and to be predominantly in tunneling at 0.5-1.0 V, from ideality factors estimated from the forward I-V curve. Grain boundaries in the UNCD/a-C:H film might act as centers for tunneling. From the capacitance-voltage measurement, the build-in potential of the heterojunction and an active carrier concentration in the p-type UNCD/a-C:H film were estimated to be 0.6 eV and 1.4 × 10 17 cm-3, respectively.

    Original languageEnglish
    Article number035101
    JournalJapanese journal of applied physics
    Volume50
    Issue number3
    DOIs
    Publication statusPublished - Mar 1 2011

    Fingerprint

    Amorphous carbon
    Heterojunctions
    heterojunctions
    Diamonds
    Diodes
    diamonds
    diodes
    Silicon
    composite materials
    carbon
    Composite materials
    Electric potential
    electric potential
    silicon
    Capacitance measurement
    Carrier transport
    Voltage measurement
    rectification
    Pulsed laser deposition
    Leakage currents

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Heterojunction diodes comprised of n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite. / Ohmagari, Shinya; Al-Riyami, Sausan; Yoshitake, Tsuyoshi.

    In: Japanese journal of applied physics, Vol. 50, No. 3, 035101, 01.03.2011.

    Research output: Contribution to journalArticle

    @article{ec500713903049878bb52290ee893916,
    title = "Heterojunction diodes comprised of n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite",
    abstract = "Heterojunction diodes comprised of p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) and n-type Si, wherein 3 at.{\%} boron-doped UNCD/a-C:H films were deposited on Si substrates by pulsed laser deposition, were electrically studied. The current-voltage (I-V) characteristics showed the typical rectification action with a leakage current density of 4.7 × 10-5 A/cm2 at a reverse voltage of -1 V. The carrier transport is expected to be in generation-recombination process accompanied by tunneling at low forward voltages of 0.1-0.5 V, and to be predominantly in tunneling at 0.5-1.0 V, from ideality factors estimated from the forward I-V curve. Grain boundaries in the UNCD/a-C:H film might act as centers for tunneling. From the capacitance-voltage measurement, the build-in potential of the heterojunction and an active carrier concentration in the p-type UNCD/a-C:H film were estimated to be 0.6 eV and 1.4 × 10 17 cm-3, respectively.",
    author = "Shinya Ohmagari and Sausan Al-Riyami and Tsuyoshi Yoshitake",
    year = "2011",
    month = "3",
    day = "1",
    doi = "10.1143/JJAP.50.035101",
    language = "English",
    volume = "50",
    journal = "Japanese Journal of Applied Physics",
    issn = "0021-4922",
    number = "3",

    }

    TY - JOUR

    T1 - Heterojunction diodes comprised of n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite

    AU - Ohmagari, Shinya

    AU - Al-Riyami, Sausan

    AU - Yoshitake, Tsuyoshi

    PY - 2011/3/1

    Y1 - 2011/3/1

    N2 - Heterojunction diodes comprised of p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) and n-type Si, wherein 3 at.% boron-doped UNCD/a-C:H films were deposited on Si substrates by pulsed laser deposition, were electrically studied. The current-voltage (I-V) characteristics showed the typical rectification action with a leakage current density of 4.7 × 10-5 A/cm2 at a reverse voltage of -1 V. The carrier transport is expected to be in generation-recombination process accompanied by tunneling at low forward voltages of 0.1-0.5 V, and to be predominantly in tunneling at 0.5-1.0 V, from ideality factors estimated from the forward I-V curve. Grain boundaries in the UNCD/a-C:H film might act as centers for tunneling. From the capacitance-voltage measurement, the build-in potential of the heterojunction and an active carrier concentration in the p-type UNCD/a-C:H film were estimated to be 0.6 eV and 1.4 × 10 17 cm-3, respectively.

    AB - Heterojunction diodes comprised of p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) and n-type Si, wherein 3 at.% boron-doped UNCD/a-C:H films were deposited on Si substrates by pulsed laser deposition, were electrically studied. The current-voltage (I-V) characteristics showed the typical rectification action with a leakage current density of 4.7 × 10-5 A/cm2 at a reverse voltage of -1 V. The carrier transport is expected to be in generation-recombination process accompanied by tunneling at low forward voltages of 0.1-0.5 V, and to be predominantly in tunneling at 0.5-1.0 V, from ideality factors estimated from the forward I-V curve. Grain boundaries in the UNCD/a-C:H film might act as centers for tunneling. From the capacitance-voltage measurement, the build-in potential of the heterojunction and an active carrier concentration in the p-type UNCD/a-C:H film were estimated to be 0.6 eV and 1.4 × 10 17 cm-3, respectively.

    UR - http://www.scopus.com/inward/record.url?scp=79953095772&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=79953095772&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.50.035101

    DO - 10.1143/JJAP.50.035101

    M3 - Article

    AN - SCOPUS:79953095772

    VL - 50

    JO - Japanese Journal of Applied Physics

    JF - Japanese Journal of Applied Physics

    SN - 0021-4922

    IS - 3

    M1 - 035101

    ER -