HfO2-assisted SiO2 reduction in HfO 2/SiO2/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The ultra-thin SiO2 interface layer (SiO2-IL) in the HfO2/SiO2/Si stack was found to be reduced during the ultra-high vacuum (UHV) annealing. Along with thin SiO2-IL reduction in UHV, SiO desorption and silicide formation also took place. The thermal desorption spectroscopy and X-ray photoelectron spectroscopy results showed that the SiO2-IL reduction occurred at temperatures lower than the temperature showing SiO desorption and silicidation by accurately controlling the annealing conditions. The mechanism of SiO2-IL reduction can be explained by the oxygen diffusion through oxygen vacancies in HfO2 generated in the gate stack formation and thermal treatment. It is also understandable that the silicidation process is associated with the inhomogeneous SiO desorption.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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