High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise

Takeshi Mizoguchi, Yoko Sakiyama, Naoto Tsukamoto, Wataru Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents a newly developed compact model of IGBT/IEGTs for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The proposed model focuses on the capacitance changes between each terminal during the switching operation and has two specific features, (1) the gate-emitter capacitance Cge formed by non-linear functions which consider the negative capacitance for reproducing the turn-on dI/dt and (2) sub-circuits with ideal-diode and CR connected to the gate-collector and the collector-emitter for reproducing the turn-off dV/dt and the tail current. Compared to the conventional model, it was concluded that the proposed model is able to reproduce the measured turn-on and turn-off switching waveform accurately with high convergence.

Original languageEnglish
Title of host publication2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages307-310
Number of pages4
ISBN (Electronic)9781728105796
DOIs
Publication statusPublished - May 2019
Externally publishedYes
Event31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China
Duration: May 19 2019May 23 2019

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2019-May
ISSN (Print)1063-6854

Conference

Conference31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
CountryChina
CityShanghai
Period5/19/195/23/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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