High amount cluster incorporation in initial Si film deposition by SiH 4 plasma chemical vapor deposition

Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH*, Si* emission intensities and their intensity ratio.

Original languageEnglish
Article number01AD01
JournalJapanese journal of applied physics
Volume52
Issue number1 PART2
DOIs
Publication statusPublished - Jan 1 2013

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Chemical vapor deposition
Volume fraction
vapor deposition
Plasmas
Quartz crystal microbalances
quartz crystals
microbalances
Deposition rates
in situ measurement
filters
profiles

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High amount cluster incorporation in initial Si film deposition by SiH 4 plasma chemical vapor deposition. / Kim, Yeonwon; Hatozaki, Kosuke; Hashimoto, Yuji; Uchida, Giichiro; Kamataki, Kunihiro; Itagaki, Naho; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu.

In: Japanese journal of applied physics, Vol. 52, No. 1 PART2, 01AD01, 01.01.2013.

Research output: Contribution to journalArticle

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AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

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