High amount cluster incorporation in initial Si film deposition by SiH 4 plasma chemical vapor deposition

Yeonwon Kim; Kosuke Hatozaki; Yuji Hashimoto; Giichiro Uchida; Kunihiro Kamataki; Naho Itagaki; Hyunwoong Seo; Kazunori Koga; Masaharu Shiratani

doi:10.7567/JJAP.52.01AD01

High amount cluster incorporation in initial Si film deposition by SiH ₄ plasma chemical vapor deposition

Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH*, Si* emission intensities and their intensity ratio.

Original language	English
Article number	01AD01
Journal	Japanese journal of applied physics
Volume	52
Issue number	1 PART2
DOIs	https://doi.org/10.7567/JJAP.52.01AD01
Publication status	Published - Jan 1 2013

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.52.01AD01

Cite this

@article{a9727d5cba6e4bfbbda80ea22318b76d,

title = "High amount cluster incorporation in initial Si film deposition by SiH 4 plasma chemical vapor deposition",

abstract = "We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH*, Si* emission intensities and their intensity ratio.",

author = "Yeonwon Kim and Kosuke Hatozaki and Yuji Hashimoto and Giichiro Uchida and Kunihiro Kamataki and Naho Itagaki and Hyunwoong Seo and Kazunori Koga and Masaharu Shiratani",

year = "2013",

month = jan,

day = "1",

doi = "10.7567/JJAP.52.01AD01",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "1 PART2",

}

TY - JOUR

T1 - High amount cluster incorporation in initial Si film deposition by SiH 4 plasma chemical vapor deposition

AU - Kim, Yeonwon

AU - Hatozaki, Kosuke

AU - Hashimoto, Yuji

AU - Uchida, Giichiro

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH*, Si* emission intensities and their intensity ratio.

AB - We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH*, Si* emission intensities and their intensity ratio.

UR - http://www.scopus.com/inward/record.url?scp=84872834205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872834205&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.01AD01

DO - 10.7567/JJAP.52.01AD01

M3 - Article

AN - SCOPUS:84872834205

SN - 0021-4922

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1 PART2

M1 - 01AD01

ER -

High amount cluster incorporation in initial Si film deposition by SiH ₄ plasma chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this