TY - GEN
T1 - High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET
AU - Noge, Yuichi
AU - Shoyama, Masahito
N1 - Funding Information:
VI. ACKNOWLEDGEMENT This work was supported by Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), “Energy systems of an Internet of Energy (IoE) society” (Funding agency : Japan Science and Technology Agency).
Publisher Copyright:
© 2022 IEEJ-IAS.
PY - 2022
Y1 - 2022
N2 - This paper investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type active gate driver utilizes the reactive voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recently, the improvement of the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 700 V / 80 A. This paper describes the construction of the AGD circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.
AB - This paper investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type active gate driver utilizes the reactive voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recently, the improvement of the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 700 V / 80 A. This paper describes the construction of the AGD circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.
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U2 - 10.23919/IPEC-Himeji2022-ECCE53331.2022.9807124
DO - 10.23919/IPEC-Himeji2022-ECCE53331.2022.9807124
M3 - Conference contribution
AN - SCOPUS:85134212617
T3 - 2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia
SP - 2097
EP - 2103
BT - 2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia
Y2 - 15 May 2022 through 19 May 2022
ER -
