High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura, Hiromichi Ohashi

Research output: Contribution to journalArticle

322 Citations (Scopus)

Abstract

AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 mΩcm2, which is 20 times lower than that of silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm2 turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.

Original languageEnglish
Pages (from-to)2528-2531
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume50
Issue number12
DOIs
Publication statusPublished - Dec 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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