High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura, Kunio Tsuda

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A high-breakdown voltage AlGaN/GaN MIS-HFET with extreme low leakage current was fabricated for power electronics applications. The fabricated device realized the high breakdown voltage of 550 V with the field plate structure and achieved dramatic reduction of the leakage current to 20 nA/mm due to the MIS gate structure. The leakage current of the MIS-HFET is three orders of magnitude lower than that of the AlGaN/GaN HFET without MIS structure.

Original languageEnglish
Pages (from-to)2647-2650
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number7
DOIs
Publication statusPublished - Nov 7 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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