A high-breakdown voltage AlGaN/GaN MIS-HFET with extreme low leakage current was fabricated for power electronics applications. The fabricated device realized the high breakdown voltage of 550 V with the field plate structure and achieved dramatic reduction of the leakage current to 20 nA/mm due to the MIS gate structure. The leakage current of the MIS-HFET is three orders of magnitude lower than that of the AlGaN/GaN HFET without MIS structure.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics