High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ · cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.

Original languageEnglish
Pages (from-to)1913-1917
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number11
DOIs
Publication statusPublished - Nov 1 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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