High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

Wataru Saito; Masahiko Kuraguchi; Yoshiharu Takada; Kunio Tsuda; Ichiro Omura; Tsuneo Ogura

doi:10.1109/TED.2004.836799

High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ · cm², which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.

Original language	English
Pages (from-to)	1913-1917
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	11
DOIs	https://doi.org/10.1109/TED.2004.836799
Publication status	Published - Nov 1 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2004.836799

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title = "High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application",

abstract = "Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ · cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.",

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T1 - High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

AU - Saito, Wataru

AU - Kuraguchi, Masahiko

AU - Takada, Yoshiharu

AU - Tsuda, Kunio

AU - Omura, Ichiro

AU - Ogura, Tsuneo

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ · cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.

AB - Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ · cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.

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High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

Abstract

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