Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ · cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - Nov 1 2004|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering