Abstract
High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics, for this purpose, electrical properties of orientation-controlled large-grain Cie crystals on flexible-plastic dircctly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p- Type conductions. Here, hole concentrations are 2.2 x1017 and 5.8 x 1020cm 3 for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and AL in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160cm2V-1 'S-1') compared with AIC-Ge (37cm2V-1 'S-1'). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.
| Original language | English |
|---|---|
| Article number | 252110 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - Jun 23 2014 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization. / Park, Jong Hyeok; Kasahara, Kenji; Hamaya, Kohei; Miyao, Masanobu; Sadoh, Taizoh.
In: Applied Physics Letters, Vol. 104, No. 25, 252110, 23.06.2014.Research output: Contribution to journal › Article
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TY - JOUR
T1 - High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
AU - Park, Jong Hyeok
AU - Kasahara, Kenji
AU - Hamaya, Kohei
AU - Miyao, Masanobu
AU - Sadoh, Taizoh
PY - 2014/6/23
Y1 - 2014/6/23
N2 - High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics, for this purpose, electrical properties of orientation-controlled large-grain Cie crystals on flexible-plastic dircctly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p- Type conductions. Here, hole concentrations are 2.2 x1017 and 5.8 x 1020cm 3 for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and AL in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160cm2V-1 'S-1') compared with AIC-Ge (37cm2V-1 'S-1'). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.
AB - High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics, for this purpose, electrical properties of orientation-controlled large-grain Cie crystals on flexible-plastic dircctly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p- Type conductions. Here, hole concentrations are 2.2 x1017 and 5.8 x 1020cm 3 for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and AL in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160cm2V-1 'S-1') compared with AIC-Ge (37cm2V-1 'S-1'). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.
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U2 - 10.1063/1.4885716
DO - 10.1063/1.4885716
M3 - Article
AN - SCOPUS:84979238809
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 252110
ER -