High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Jong Hyeok Park, Kenji Kasahara, Kohei Hamaya, Masanobu Miyao, Taizoh Sadoh

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics, for this purpose, electrical properties of orientation-controlled large-grain Cie crystals on flexible-plastic dircctly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p- Type conductions. Here, hole concentrations are 2.2 x1017 and 5.8 x 1020cm 3 for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and AL in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160cm2V-1 'S-1') compared with AIC-Ge (37cm2V-1 'S-1'). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.

Original languageEnglish
Article number252110
JournalApplied Physics Letters
Volume104
Issue number25
DOIs
Publication statusPublished - Jun 23 2014

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carrier mobility
plastics
nucleation
crystallization
gold
aluminum
hole mobility
electronics
crystals
solubility
electrical properties
conduction

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization. / Park, Jong Hyeok; Kasahara, Kenji; Hamaya, Kohei; Miyao, Masanobu; Sadoh, Taizoh.

In: Applied Physics Letters, Vol. 104, No. 25, 252110, 23.06.2014.

Research output: Contribution to journalArticle

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