High carrier mobility of 3.8cm2 V-1 S-1 in polydiacetylene thin films polymerized by electron beam irradiation

Takuji Kato, Mao Yasumatsu, Chikako Origuchi, Kyoji Tsutsui, Yasukiyo Ueda, Chihaya Adachi

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8cm2 V -1 S-1, although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of μmax=3.8 cm2 V-1 S-1.

Original languageEnglish
Article number091601
JournalApplied Physics Express
Issue number9
Publication statusPublished - Sep 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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