High carrier mobility of 3.8cm2 V-1 S-1 in polydiacetylene thin films polymerized by electron beam irradiation

Takuji Kato, Mao Yasumatsu, Chikako Origuchi, Kyoji Tsutsui, Yasukiyo Ueda, Chihaya Adachi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8cm2 V -1 S-1, although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of μmax=3.8 cm2 V-1 S-1.

Original languageEnglish
Article number091601
JournalApplied Physics Express
Volume4
Issue number9
DOIs
Publication statusPublished - Sep 1 2011

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Carrier mobility
carrier mobility
Electron beams
Irradiation
electron beams
Thin films
irradiation
thin films
Field effect transistors
field effect transistors
polymerization
monomers
Monomers
Polymerization
occurrences
conduction
causes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High carrier mobility of 3.8cm2 V-1 S-1 in polydiacetylene thin films polymerized by electron beam irradiation. / Kato, Takuji; Yasumatsu, Mao; Origuchi, Chikako; Tsutsui, Kyoji; Ueda, Yasukiyo; Adachi, Chihaya.

In: Applied Physics Express, Vol. 4, No. 9, 091601, 01.09.2011.

Research output: Contribution to journalArticle

Kato, Takuji ; Yasumatsu, Mao ; Origuchi, Chikako ; Tsutsui, Kyoji ; Ueda, Yasukiyo ; Adachi, Chihaya. / High carrier mobility of 3.8cm2 V-1 S-1 in polydiacetylene thin films polymerized by electron beam irradiation. In: Applied Physics Express. 2011 ; Vol. 4, No. 9.
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