The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8cm2 V -1 S-1, although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of μmax=3.8 cm2 V-1 S-1.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)