High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication

Kaname Imokawa, Toshifumi Kikuchi, Kento Okamoto, Daisuke Nakamura, Akihiro Ikeda, Tanemasa Asano, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials, 2018
EditorsPeter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
PublisherTrans Tech Publications Ltd
Pages403-406
Number of pages4
ISBN (Print)9783035713329
DOIs
Publication statusPublished - Jan 1 2019
Event12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, United Kingdom
Duration: Sep 2 2018Sep 6 2018

Publication series

NameMaterials Science Forum
Volume963 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
CountryUnited Kingdom
CityBirmingham
Period9/2/189/6/18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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