High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication

Kaname Imokawa, Toshifumi Kikuchi, Kento Okamoto, Daisuke Nakamura, Akihiro Ikeda, Tanemasa Asano, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials, 2018
EditorsPeter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
PublisherTrans Tech Publications Ltd
Pages403-406
Number of pages4
ISBN (Print)9783035713329
DOIs
Publication statusPublished - Jan 1 2019
Event12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, United Kingdom
Duration: Sep 2 2018Sep 6 2018

Publication series

NameMaterials Science Forum
Volume963 MSF
ISSN (Print)0255-5476

Conference

Conference12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
CountryUnited Kingdom
CityBirmingham
Period9/2/189/6/18

Fingerprint

Excimer lasers
excimer lasers
Doping (additives)
Fabrication
fabrication
Costs
electric contacts
Thin films
junction diodes
Temperature
electrical resistivity
Laser ablation
thin films
laser ablation
transmission lines
Electric lines
implantation
Diodes
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Imokawa, K., Kikuchi, T., Okamoto, K., Nakamura, D., Ikeda, A., Asano, T., & Ikenoue, H. (2019). High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), Silicon Carbide and Related Materials, 2018 (pp. 403-406). (Materials Science Forum; Vol. 963 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.963.403

High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. / Imokawa, Kaname; Kikuchi, Toshifumi; Okamoto, Kento; Nakamura, Daisuke; Ikeda, Akihiro; Asano, Tanemasa; Ikenoue, Hiroshi.

Silicon Carbide and Related Materials, 2018. ed. / Peter M. Gammon; Vishal A. Shah; Richard A. McMahon; Michael R. Jennings; Oliver Vavasour; Philip A. Mawby; Faye Padfield. Trans Tech Publications Ltd, 2019. p. 403-406 (Materials Science Forum; Vol. 963 MSF).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Imokawa, K, Kikuchi, T, Okamoto, K, Nakamura, D, Ikeda, A, Asano, T & Ikenoue, H 2019, High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. in PM Gammon, VA Shah, RA McMahon, MR Jennings, O Vavasour, PA Mawby & F Padfield (eds), Silicon Carbide and Related Materials, 2018. Materials Science Forum, vol. 963 MSF, Trans Tech Publications Ltd, pp. 403-406, 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham, United Kingdom, 9/2/18. https://doi.org/10.4028/www.scientific.net/MSF.963.403
Imokawa K, Kikuchi T, Okamoto K, Nakamura D, Ikeda A, Asano T et al. High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. In Gammon PM, Shah VA, McMahon RA, Jennings MR, Vavasour O, Mawby PA, Padfield F, editors, Silicon Carbide and Related Materials, 2018. Trans Tech Publications Ltd. 2019. p. 403-406. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.963.403
Imokawa, Kaname ; Kikuchi, Toshifumi ; Okamoto, Kento ; Nakamura, Daisuke ; Ikeda, Akihiro ; Asano, Tanemasa ; Ikenoue, Hiroshi. / High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. Silicon Carbide and Related Materials, 2018. editor / Peter M. Gammon ; Vishal A. Shah ; Richard A. McMahon ; Michael R. Jennings ; Oliver Vavasour ; Philip A. Mawby ; Faye Padfield. Trans Tech Publications Ltd, 2019. pp. 403-406 (Materials Science Forum).
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AU - Ikenoue, Hiroshi

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