Quasi-one-dimensional compound KFeS2 crystals have been heat-treated under iodine pressure. In comparison with the as-grown crystal, the electrical resistivity of the iodine-treated crystal shows a weak temperature dependence. Applying Sheng's fluctuation induced tunneling model to the temperature dependence of the resistivity, an effect of the iodine heat-treatment can be understood to bring reduction of a potential barrier formed between the fine crystals.
|Number of pages||4|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Sep 1999|
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Engineering (miscellaneous)
- Electrical and Electronic Engineering