High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination

Peng Luo; Sankara Narayanan Ekkanath Madathil; Shin Ichi Nishizawa; Wataru Saito

High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination

Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High dV/dt controllability of IGBTs is important to achieve high power efficiency and switching speed. However, the Dynamic Avalanche (DA) phenomenon in MOS-gated bipolar devices is one major issue to affect dV/dt controllability, switching loss as well as gate stability. In this paper, the fundamental limit of the turn-off dV/dt controllability of trench IGBTs is analyzed through 3-D TCAD simulations. A DA free design enabled by Trench Clustered IGBT (TCIGBT) is investigated to show significant improvement in dV/dt controllability compared to that of conventional TIGBT at same turn-off energy loss (Eoff) condition. Furthermore, experimental results confirm that TCIGBT can remain DA free performance and high dV/dt controllability at high temperature.

Original language	English
Title of host publication	PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings
Publisher	VDE Verlag GmbH
Pages	176-180
Number of pages	5
ISBN (Electronic)	9783800753888
Publication status	Published - 2020
Event	2020 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2020 - Shanghai, China Duration: Nov 16 2020 → Nov 18 2020

Publication series

Name	PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings

Conference

Conference	2020 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2020
Country/Territory	China
City	Shanghai
Period	11/16/20 → 11/18/20

All Science Journal Classification (ASJC) codes

Artificial Intelligence
Electrical and Electronic Engineering
Hardware and Architecture
Renewable Energy, Sustainability and the Environment
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I., & Saito, W. (2020). High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. In PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings (pp. 176-180). (PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings). VDE Verlag GmbH.

High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. / Luo, Peng; Ekkanath Madathil, Sankara Narayanan; Nishizawa, Shin Ichi et al.
PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings. VDE Verlag GmbH, 2020. p. 176-180 (PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Luo, P, Ekkanath Madathil, SN, Nishizawa, SI & Saito, W 2020, High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. in PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings. PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings, VDE Verlag GmbH, pp. 176-180, 2020 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2020, Shanghai, China, 11/16/20.

Luo P, Ekkanath Madathil SN, Nishizawa SI , Saito W. High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. In PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings. VDE Verlag GmbH. 2020. p. 176-180. (PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings).

Luo, Peng ; Ekkanath Madathil, Sankara Narayanan ; Nishizawa, Shin Ichi et al. / High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings. VDE Verlag GmbH, 2020. pp. 176-180 (PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings).

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abstract = "High dV/dt controllability of IGBTs is important to achieve high power efficiency and switching speed. However, the Dynamic Avalanche (DA) phenomenon in MOS-gated bipolar devices is one major issue to affect dV/dt controllability, switching loss as well as gate stability. In this paper, the fundamental limit of the turn-off dV/dt controllability of trench IGBTs is analyzed through 3-D TCAD simulations. A DA free design enabled by Trench Clustered IGBT (TCIGBT) is investigated to show significant improvement in dV/dt controllability compared to that of conventional TIGBT at same turn-off energy loss (Eoff) condition. Furthermore, experimental results confirm that TCIGBT can remain DA free performance and high dV/dt controllability at high temperature.",

author = "Peng Luo and {Ekkanath Madathil}, {Sankara Narayanan} and Nishizawa, {Shin Ichi} and Wataru Saito",

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AU - Luo, Peng

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AU - Nishizawa, Shin Ichi

AU - Saito, Wataru

PY - 2020

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N2 - High dV/dt controllability of IGBTs is important to achieve high power efficiency and switching speed. However, the Dynamic Avalanche (DA) phenomenon in MOS-gated bipolar devices is one major issue to affect dV/dt controllability, switching loss as well as gate stability. In this paper, the fundamental limit of the turn-off dV/dt controllability of trench IGBTs is analyzed through 3-D TCAD simulations. A DA free design enabled by Trench Clustered IGBT (TCIGBT) is investigated to show significant improvement in dV/dt controllability compared to that of conventional TIGBT at same turn-off energy loss (Eoff) condition. Furthermore, experimental results confirm that TCIGBT can remain DA free performance and high dV/dt controllability at high temperature.

AB - High dV/dt controllability of IGBTs is important to achieve high power efficiency and switching speed. However, the Dynamic Avalanche (DA) phenomenon in MOS-gated bipolar devices is one major issue to affect dV/dt controllability, switching loss as well as gate stability. In this paper, the fundamental limit of the turn-off dV/dt controllability of trench IGBTs is analyzed through 3-D TCAD simulations. A DA free design enabled by Trench Clustered IGBT (TCIGBT) is investigated to show significant improvement in dV/dt controllability compared to that of conventional TIGBT at same turn-off energy loss (Eoff) condition. Furthermore, experimental results confirm that TCIGBT can remain DA free performance and high dV/dt controllability at high temperature.

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High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

UN SDGs

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