High Efficiency and Small Group Delay Variations 0.18-μ m CMOS UWB Power Amplifier

Hamed Mosalam, A. Allam, Hongting Jia, A. B. Abdel-Rahman, Ramesh Pokharel

Research output: Contribution to journalArticle

Abstract

A new staggered tuning technique, by optimizing the inter-stage matching circuit, is proposed to realize a power amplifier (PA) with small group delay (GD) variations and excellent gain flatness across the full bandwidth of ultra-wideband (UWB) system. The proposed PA consists of two stages where the first stage is constructed by a current-reuse with shunt RC feedback topology to realize gain flatness and low power consumption. The design is implemented in 0.18 μ m commentary metal-oxide semiconductor (CMOS) technology, fabricated, and tested. The proposed PA has a measured power gain (|S 21 |) of 11.5 ± 0.7 dB, maximum power-added efficiency (PAE) of 26% and an output 1-dB compression point of 9 dBm, respectively, and this is the maximum PAE among CMOS PAs that cover the full bandwidth of UWB system. Besides, the PA has a small GD variations of ± 68 ps which is the lowest till date.

Original languageEnglish
Article number8464178
Pages (from-to)592-596
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume66
Issue number4
DOIs
Publication statusPublished - Apr 1 2019

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Broadband amplifiers
Group delay
Power amplifiers
Ultra-wideband (UWB)
Metals
Bandwidth
Electric power utilization
Tuning
Topology
Feedback
Oxide semiconductors
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

High Efficiency and Small Group Delay Variations 0.18-μ m CMOS UWB Power Amplifier. / Mosalam, Hamed; Allam, A.; Jia, Hongting; Abdel-Rahman, A. B.; Pokharel, Ramesh.

In: IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 66, No. 4, 8464178, 01.04.2019, p. 592-596.

Research output: Contribution to journalArticle

Mosalam, Hamed ; Allam, A. ; Jia, Hongting ; Abdel-Rahman, A. B. ; Pokharel, Ramesh. / High Efficiency and Small Group Delay Variations 0.18-μ m CMOS UWB Power Amplifier. In: IEEE Transactions on Circuits and Systems II: Express Briefs. 2019 ; Vol. 66, No. 4. pp. 592-596.
@article{f95a924e3dec4e9d83c8d83c08c2d328,
title = "High Efficiency and Small Group Delay Variations 0.18-μ m CMOS UWB Power Amplifier",
abstract = "A new staggered tuning technique, by optimizing the inter-stage matching circuit, is proposed to realize a power amplifier (PA) with small group delay (GD) variations and excellent gain flatness across the full bandwidth of ultra-wideband (UWB) system. The proposed PA consists of two stages where the first stage is constructed by a current-reuse with shunt RC feedback topology to realize gain flatness and low power consumption. The design is implemented in 0.18 μ m commentary metal-oxide semiconductor (CMOS) technology, fabricated, and tested. The proposed PA has a measured power gain (|S 21 |) of 11.5 ± 0.7 dB, maximum power-added efficiency (PAE) of 26{\%} and an output 1-dB compression point of 9 dBm, respectively, and this is the maximum PAE among CMOS PAs that cover the full bandwidth of UWB system. Besides, the PA has a small GD variations of ± 68 ps which is the lowest till date.",
author = "Hamed Mosalam and A. Allam and Hongting Jia and Abdel-Rahman, {A. B.} and Ramesh Pokharel",
year = "2019",
month = "4",
day = "1",
doi = "10.1109/TCSII.2018.2870165",
language = "English",
volume = "66",
pages = "592--596",
journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",
issn = "1549-7747",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - High Efficiency and Small Group Delay Variations 0.18-μ m CMOS UWB Power Amplifier

AU - Mosalam, Hamed

AU - Allam, A.

AU - Jia, Hongting

AU - Abdel-Rahman, A. B.

AU - Pokharel, Ramesh

PY - 2019/4/1

Y1 - 2019/4/1

N2 - A new staggered tuning technique, by optimizing the inter-stage matching circuit, is proposed to realize a power amplifier (PA) with small group delay (GD) variations and excellent gain flatness across the full bandwidth of ultra-wideband (UWB) system. The proposed PA consists of two stages where the first stage is constructed by a current-reuse with shunt RC feedback topology to realize gain flatness and low power consumption. The design is implemented in 0.18 μ m commentary metal-oxide semiconductor (CMOS) technology, fabricated, and tested. The proposed PA has a measured power gain (|S 21 |) of 11.5 ± 0.7 dB, maximum power-added efficiency (PAE) of 26% and an output 1-dB compression point of 9 dBm, respectively, and this is the maximum PAE among CMOS PAs that cover the full bandwidth of UWB system. Besides, the PA has a small GD variations of ± 68 ps which is the lowest till date.

AB - A new staggered tuning technique, by optimizing the inter-stage matching circuit, is proposed to realize a power amplifier (PA) with small group delay (GD) variations and excellent gain flatness across the full bandwidth of ultra-wideband (UWB) system. The proposed PA consists of two stages where the first stage is constructed by a current-reuse with shunt RC feedback topology to realize gain flatness and low power consumption. The design is implemented in 0.18 μ m commentary metal-oxide semiconductor (CMOS) technology, fabricated, and tested. The proposed PA has a measured power gain (|S 21 |) of 11.5 ± 0.7 dB, maximum power-added efficiency (PAE) of 26% and an output 1-dB compression point of 9 dBm, respectively, and this is the maximum PAE among CMOS PAs that cover the full bandwidth of UWB system. Besides, the PA has a small GD variations of ± 68 ps which is the lowest till date.

UR - http://www.scopus.com/inward/record.url?scp=85053294583&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053294583&partnerID=8YFLogxK

U2 - 10.1109/TCSII.2018.2870165

DO - 10.1109/TCSII.2018.2870165

M3 - Article

VL - 66

SP - 592

EP - 596

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

SN - 1549-7747

IS - 4

M1 - 8464178

ER -