High-efficiency InGaN/GaN light emitters based on nanophotonics and plasmonics

Koichi Okamoto, Yoichi Kawakami

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

We report novel methods to enhance light emission efficiencies from InGaN/GaN quantum wells (QWs) based on nanophotonics and plasmonics. First, the nanoscopic optical properties were observed and characterized based on the carrier localization and the quantum confinement Stark effect depending on the In composition of InGaN. Based on the results, we proposed that the emission efficiencies should be improved by making nanostructures, and showed actual enhancement of photoluminescence (PL) intensities by using fabricated random nanodisk and arrayed nanopillar structures. Moreover, surface plasmon (SP) coupling technique was used to enhance blue and green light emissions from InGaN/GaN QWs. We obtained a 14-fold increase in the PL intensity along with a 7-fold increase in the internal quantum efficiency (IQE) of light emission from InGaN/GaN when nanostructured Ag layers were deposited 10 nm above the QWs. The possible enhancement mechanism was discussed and reproduced by using the 3-D finite-difference time-domain simulations. Electronhole pairs in InGaN QWs couple to electron oscillations at the metal surface and produce SPs instead of photons or phonons. This new path increases the spontaneous emission rate and the IQEs. The SP-emitter coupling technique would lead to superbright and high-speed solid-state light-emitting devices that offer realistic alternatives to conventional fluorescent light sources.

Original languageEnglish
Article number5175409
Pages (from-to)1199-1209
Number of pages11
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number4
DOIs
Publication statusPublished - Jul 31 2009

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Nanophotonics
Semiconductor quantum wells
Light emission
emitters
quantum wells
light emission
Photoluminescence
electron oscillations
photoluminescence
Stark effect
Quantum confinement
augmentation
Spontaneous emission
Phonons
Quantum efficiency
spontaneous emission
metal surfaces
Light sources
quantum efficiency
Nanostructures

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

High-efficiency InGaN/GaN light emitters based on nanophotonics and plasmonics. / Okamoto, Koichi; Kawakami, Yoichi.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 15, No. 4, 5175409, 31.07.2009, p. 1199-1209.

Research output: Contribution to journalArticle

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