Abstract
The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94A/W and a 3dB bandwidth near 4GHz at an operating voltage of 0V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.
Original language | English |
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Pages (from-to) | 160-161 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 33 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 16 1997 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering