High-efficiency, zero-bias waveguide pin photodiode for low-power-consumption optical hybrid modules

Y. Muramoto; Kazutoshi Kato; A. Kozen; M. Ueki; K. Noguchi; Y. Akatsu; O. Nakajima

doi:10.1049/el:19970097

High-efficiency, zero-bias waveguide pin photodiode for low-power-consumption optical hybrid modules

Y. Muramoto, Kazutoshi Kato, A. Kozen, M. Ueki, K. Noguchi, Y. Akatsu, O. Nakajima

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94A/W and a 3dB bandwidth near 4GHz at an operating voltage of 0V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.

Original language	English
Pages (from-to)	160-161
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	2
DOIs	https://doi.org/10.1049/el:19970097
Publication status	Published - Jan 16 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19970097

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abstract = "The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94A/W and a 3dB bandwidth near 4GHz at an operating voltage of 0V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.",

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T1 - High-efficiency, zero-bias waveguide pin photodiode for low-power-consumption optical hybrid modules

AU - Muramoto, Y.

AU - Kato, Kazutoshi

AU - Kozen, A.

AU - Ueki, M.

AU - Noguchi, K.

AU - Akatsu, Y.

AU - Nakajima, O.

PY - 1997/1/16

Y1 - 1997/1/16

N2 - The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94A/W and a 3dB bandwidth near 4GHz at an operating voltage of 0V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.

AB - The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94A/W and a 3dB bandwidth near 4GHz at an operating voltage of 0V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.

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ER -

High-efficiency, zero-bias waveguide pin photodiode for low-power-consumption optical hybrid modules

Abstract

All Science Journal Classification (ASJC) codes

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