Abstract
The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94A/W and a 3dB bandwidth near 4GHz at an operating voltage of 0V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.
| Original language | English |
|---|---|
| Pages (from-to) | 160-161 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 33 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 16 1997 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
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Cite this
Muramoto, Y., Kato, K., Kozen, A., Ueki, M., Noguchi, K., Akatsu, Y., & Nakajima, O. (1997). High-efficiency, zero-bias waveguide pin photodiode for low-power-consumption optical hybrid modules. Electronics Letters, 33(2), 160-161. https://doi.org/10.1049/el:19970097