High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate

T. Yamanaka, K. Yamamoto, K. Sakamoto, H. Yang, D. Wang, H. Nakashima

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	889-890
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2011.e-1-5
Publication status	Published - Sept 28 2011
Event	2011 International Conference on Solid State Devices and Materials (SSDM2011) - Aichi Industry & Labor Center, Nagoya, Japan Duration: Sept 27 2011 → Sept 30 2011

Conference	2011 International Conference on Solid State Devices and Materials (SSDM2011)
Country/Territory	Japan
City	Nagoya
Period	9/27/11 → 9/30/11

Access to Document

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title = "High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate",

author = "T. Yamanaka and K. Yamamoto and K. Sakamoto and H. Yang and D. Wang and H. Nakashima",

year = "2011",

month = sep,

day = "28",

doi = "10.7567/ssdm.2011.e-1-5",

language = "English",

pages = "889--890",

note = "2011 International Conference on Solid State Devices and Materials (SSDM2011) ; Conference date: 27-09-2011 Through 30-09-2011",

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TY - CONF

T1 - High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate

AU - Yamanaka, T.

AU - Yamamoto, K.

AU - Sakamoto, K.

AU - Yang, H.

AU - Wang, D.

AU - Nakashima, H.

PY - 2011/9/28

Y1 - 2011/9/28

U2 - 10.7567/ssdm.2011.e-1-5

DO - 10.7567/ssdm.2011.e-1-5

M3 - Paper

SP - 889

EP - 890

T2 - 2011 International Conference on Solid State Devices and Materials (SSDM2011)

Y2 - 27 September 2011 through 30 September 2011

ER -