High electron mobility (>16 cm2/Vsec) FETs with high on/off ratio (>106) and highly conductive films (σ>102 S/cm) by chemical doping in very thin (∼20 nm) TiO2 films on thermally grown SiO2

Go Oike, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated electrical conduction of TiO2 films by both field-effect and chemical doping. We report that FET characteristics of TiO2 are affected very much by PDA condition and that its conductivity is also significantly increased by chemical doping. The results are quite promising for both TFT and transparent electrode applications of Ti O2.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages11.5.1-11.5.4
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: Dec 9 2013Dec 11 2013

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period12/9/1312/11/13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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