High field-effect hole mobility in organic-inorganic hybrid thin films prepared by vacuum vapor deposition technique

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Abstract

Organic-inorganic layered perovskite films, (C6H 5C2H4NH3)2SnI 4, were grown on 60°C substrates at a growth rate of 0.0005 nm/s by a vacuum vapor deposition technique, and field-effect transistors with a hybrid semiconductor were fabricated. From measurements of ultraviolet-visible (UV-VIS) absorption spectra and X-ray diffraction profiles, the vacuum-deposited films contained a well-developed layered perovskite structure, where inorganic sheets alternate with organic layers in the direction perpendicular to the substrate surface. In the field-effect transistors, the vacuum-deposited hybrid films acted as p-channel semiconductors and exhibited a hole mobility of 0.78cm2/Vs in the saturation regime, a threshold voltage of -1.7V, and a drain current on/off ratio of 4.2 × 105.

Original languageEnglish
Pages (from-to)L1199-L1201
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number9 AB
DOIs
Publication statusPublished - Sep 15 2004

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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