High field-effect mobility in an organic thin-film transistor with a solid-state polymerized polydiacetylene film as an active layer

The field-effect mobility in a PDA-polydiacetylene film by controlling the substrate temperature was investigated. The thin-film morphologies of a diacetylene monomer was controlled by changing the substrate temperature during monomer deposition, to obtain high field-effect mobility. The photopolymerized PDA thin film showed typical FET characteristics and physical migration of the Au deposition mat have reduced the contact resistance. The FET characteristics was improved by changing the substrate temperature during the deposition of the PDA monomers. The surface morphologies of the polydiacetylene films at each temperature was also investigated by atomic force microscopy. The Photopolymerized PDA films showed various morphologies composed of both small crystalline particles and domains. It was observed that polydiacetylenes possess an intrinsically high potential for high carrier mobility.