TY - JOUR
T1 - High-field electron transport in A-Si
T2 - H
AU - Imao, Shozo
AU - Nakajima, Shigeki
AU - Nakata, Jun Ichi
AU - Hattori, Reiji
AU - Shirafuji, Junji
AU - Inuishi, Yoshio
PY - 1991/7
Y1 - 1991/7
N2 - High-electric-field electron transport in a-Si:H films has been investigated by means of time-of-flight (TOF) measurements. The drift mobility increased with increasing applied field at lower temperature (<300 K), accompanied by a simultaneous increase in the dispersion parameter resulting in nondispersive transport. The mobility was much less field- dependent at higher temperature where the nondispersive transport was attained. The experimental results are consistently explained by taking account of the increase in electron temperature (hot electron) at higher field into the theory of dispersive transport.
AB - High-electric-field electron transport in a-Si:H films has been investigated by means of time-of-flight (TOF) measurements. The drift mobility increased with increasing applied field at lower temperature (<300 K), accompanied by a simultaneous increase in the dispersion parameter resulting in nondispersive transport. The mobility was much less field- dependent at higher temperature where the nondispersive transport was attained. The experimental results are consistently explained by taking account of the increase in electron temperature (hot electron) at higher field into the theory of dispersive transport.
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U2 - 10.1143/JJAP.30.L1227
DO - 10.1143/JJAP.30.L1227
M3 - Article
AN - SCOPUS:0026188188
SN - 0021-4922
VL - 30
SP - 1227
EP - 1230
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 7
ER -