High-field electron transport in A-Si: H

Shozo Imao, Shigeki Nakajima, Jun Ichi Nakata, Reiji Hattori, Junji Shirafuji, Yoshio Inuishi

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Abstract

High-electric-field electron transport in a-Si:H films has been investigated by means of time-of-flight (TOF) measurements. The drift mobility increased with increasing applied field at lower temperature (<300 K), accompanied by a simultaneous increase in the dispersion parameter resulting in nondispersive transport. The mobility was much less field- dependent at higher temperature where the nondispersive transport was attained. The experimental results are consistently explained by taking account of the increase in electron temperature (hot electron) at higher field into the theory of dispersive transport.

Original languageEnglish
Pages (from-to)1227-1230
Number of pages4
JournalJapanese Journal of Applied Physics
Volume30
Issue number7
DOIs
Publication statusPublished - Jul 1991
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Imao, S., Nakajima, S., Nakata, J. I., Hattori, R., Shirafuji, J., & Inuishi, Y. (1991). High-field electron transport in A-Si: H. Japanese Journal of Applied Physics, 30(7), 1227-1230. https://doi.org/10.1143/JJAP.30.L1227