High field magnetoresistance and de Haas-van Alphen effect in LaRu 2Al10

Masahito Sakoda, Shuhei Tanaka, Eiichi Matsuoka, Hitoshi Sugawara, Hisatomo Harima, Fuminori Honda, Rikio Settai, Yoshichika Onuki, Tatsuma D. Matsuda, Yoshinori Haga

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8 Citations (Scopus)

Abstract

We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu 2Al10 that exhibits an unusual transition at T0 27K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu 2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m0 (m0: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.

Original languageEnglish
Article number084716
Journaljournal of the physical society of japan
Volume80
Issue number8
DOIs
Publication statusPublished - Aug 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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