TY - JOUR
T1 - High field magnetoresistance and de Haas-van Alphen effect in LaRu 2Al10
AU - Sakoda, Masahito
AU - Tanaka, Shuhei
AU - Matsuoka, Eiichi
AU - Sugawara, Hitoshi
AU - Harima, Hisatomo
AU - Honda, Fuminori
AU - Settai, Rikio
AU - Onuki, Yoshichika
AU - Matsuda, Tatsuma D.
AU - Haga, Yoshinori
PY - 2011/8
Y1 - 2011/8
N2 - We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu 2Al10 that exhibits an unusual transition at T0 27K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu 2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m0 (m0: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.
AB - We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu 2Al10 that exhibits an unusual transition at T0 27K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu 2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m0 (m0: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.
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U2 - 10.1143/JPSJ.80.084716
DO - 10.1143/JPSJ.80.084716
M3 - Article
AN - SCOPUS:80051585573
SN - 0031-9015
VL - 80
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
IS - 8
M1 - 084716
ER -