TY - JOUR
T1 - High-field transport properties of itinerant electron metamagnetic Co(S1-xSex)2
AU - Wada, Hirofumi
AU - Maekawa, Yoshiro
AU - Kawasaki, Daichi
N1 - Funding Information:
Professor Peter Brommer played a leading role in itinerant electron magnetism. We thank him for his encouragements. This paper is dedicated to his memory. This work was partially supported by a Grant-in Aid for Scientific Research from Ministry of Education, Culture, Sports, Science and Technology Japan .
Publisher Copyright:
© 2016
PY - 2016/6
Y1 - 2016/6
N2 - The Co(S1-xSex)2 compounds are known to exhibit itinerant electron metamagnetism (IEM). We present field dependence of electrical resistivity and Hall effect of the compounds with 0 ≤ x < 0.15. It was found that the magnetoresistance shows a positive jump associated with the IEM. This jump is nearly independent of temperature. We also observed a jump in the field dependence of Hall resistivity, which is attributable to the anomalous Hall effect due to the onset of ferromagnetism. Our analyses revealed that the ordinary Hall coefficient decreases considerably by the IEM. These results are discussed in terms of the proposed electronic structure of CoS2, in which a highly spin polarized state is achieved.
AB - The Co(S1-xSex)2 compounds are known to exhibit itinerant electron metamagnetism (IEM). We present field dependence of electrical resistivity and Hall effect of the compounds with 0 ≤ x < 0.15. It was found that the magnetoresistance shows a positive jump associated with the IEM. This jump is nearly independent of temperature. We also observed a jump in the field dependence of Hall resistivity, which is attributable to the anomalous Hall effect due to the onset of ferromagnetism. Our analyses revealed that the ordinary Hall coefficient decreases considerably by the IEM. These results are discussed in terms of the proposed electronic structure of CoS2, in which a highly spin polarized state is achieved.
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U2 - 10.1016/j.jsamd.2016.06.001
DO - 10.1016/j.jsamd.2016.06.001
M3 - Article
AN - SCOPUS:85049835040
SN - 2468-2284
VL - 1
SP - 179
EP - 184
JO - Journal of Science: Advanced Materials and Devices
JF - Journal of Science: Advanced Materials and Devices
IS - 2
ER -