High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain

T. Sada, K. Yamamoto, H. Yang, D. Wang, H. Nakashima

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Pages737-738
Number of pages2
DOIs
Publication statusPublished - Sep 26 2012
Event2012 International Conference on Solid State Devices and Materials (SSDM2012) - Kyoto International Conference Center, Kyoto, Japan
Duration: Sep 25 2012Sep 27 2012

Conference

Conference2012 International Conference on Solid State Devices and Materials (SSDM2012)
Country/TerritoryJapan
CityKyoto
Period9/25/129/27/12

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