High-hole-mobility single-crystalline ge thin films formed on insulating substrates by SiGe mixing-triggered directional melting growth

Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The development of high-carrier-mobility Ge-channel thin-film transistors (TFTs) is desired to realize advanced system-in-displays. To achieve the development of single-crystalline Ge films on insulating substrates, we have developed the directional melting growth process of amorphous Ge by using polycrystalline Si islands as growth seeds. Defect-free single-crystalline Ge stripes of 400 mm length are realized, and high-holemobilities of more than 1000 cm2 V-1 s-1 are demonstrated in the entire lateral growth region. This method opens up the possibility of fabricating high-speed Ge-channel TFTs for system-in-displays.

Original languageEnglish
Article number04DA08
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - Apr 1 2010

Fingerprint

Hole mobility
hole mobility
Melting
melting
Thin film transistors
Crystalline materials
Thin films
transistors
Substrates
thin films
Display devices
Carrier mobility
carrier mobility
Seed
seeds
high speed
Defects
defects

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High-hole-mobility single-crystalline ge thin films formed on insulating substrates by SiGe mixing-triggered directional melting growth. / Toko, Kaoru; Tanaka, Takanori; Sadoh, Taizoh; Miyao, Masanobu.

In: Japanese journal of applied physics, Vol. 49, No. 4 PART 2, 04DA08, 01.04.2010.

Research output: Contribution to journalArticle

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