A semi-insulating InP buried structure is applied to a unitravelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ∼ 120mW (23.5mA × 5V), a responsivity of 0.7AAV, and a bandwidth of 47GHz.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering