High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semiinsulating-lnP buried structure

M. Yuda, K. Kato, R. Iga, M. Mitsuhara

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A semi-insulating InP buried structure is applied to a unitravelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ∼ 120mW (23.5mA × 5V), a responsivity of 0.7AAV, and a bandwidth of 47GHz.

Original languageEnglish
Pages (from-to)1377-1379
Number of pages3
JournalElectronics Letters
Volume35
Issue number16
DOIs
Publication statusPublished - Aug 5 1999
Externally publishedYes

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Photodiodes
Waveguides
Photocurrents
Polyimides
Bandwidth
Electric potential
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semiinsulating-lnP buried structure. / Yuda, M.; Kato, K.; Iga, R.; Mitsuhara, M.

In: Electronics Letters, Vol. 35, No. 16, 05.08.1999, p. 1377-1379.

Research output: Contribution to journalArticle

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