High-Ic processing for YBCO coated conductors by TFA-MOD process

Ryo Teranishi, Junko Matsuda, Koichi Nakaoka, Hiroshi Fuji, Yuji Aoki, Yutaka Kitoh, Sukeharu Nomoto, Yutaka Yamada, Akimasa Yajima, Teruo Izumi, Yuh Shiohara

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

YBCO films were fabricated on PLD-CeO2/IBAD-Gd 2Zr2 O7/Hastelloy substrates using the TFA-MOD process. In order to obtain higher Ic performance, the thicker films maintaining high-Jc values are required. Jc depended strongly on the PH2O during the crystallization in the process. The pore size was smaller in the high-Jc films crystallized under the medium PH2O condition and became larger in the low-Jc films under both lower and higher PH2O for the YBCO films with a constant thickness. Furthermore, crack generation was observed in thick films crystallized at the high PH2O condition. Consequently, both pore and crack formations limit the Jc properties since large pore causes local reduction of current paths and additionally results in local concentration of electric fields. Jc also depended strongly on the YBCO crystal grain alignment which is affected by in-plane grain alignment of the buffered substrate. Then, the effect of in-plane grain alignment of the CeO2 cap layer on Jc was investigated for thicker YBCO films. As a result, the Jc value increased with improvement of the crystal alignment of the CeO2 cap layers. Finally, a YBCO film with a high-Ic value of 413 A at 77 K in self-field was achieved in a film fabricated on Δφ = 4° of the CeO2 layer using the appropriate crystallization conditions for crack-free film.

Original languageEnglish
Pages (from-to)959-965
Number of pages7
JournalPhysica C: Superconductivity and its applications
Volume426-431
Issue numberII
DOIs
Publication statusPublished - Oct 7 2005
EventProceedings of the 17th Internatioanl Symposium on Superconductivity (ISS 2004) Advances in Superconductivity -
Duration: Nov 23 2004Nov 25 2004

Fingerprint

conductors
Processing
Thick films
alignment
Crystallization
porosity
caps
thick films
cracks
Cracks
Ion beam assisted deposition
Crystals
crystallization
Hastelloy (trademark)
Substrates
Pulsed laser deposition
crack initiation
Crack initiation
Pore size
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

High-Ic processing for YBCO coated conductors by TFA-MOD process. / Teranishi, Ryo; Matsuda, Junko; Nakaoka, Koichi; Fuji, Hiroshi; Aoki, Yuji; Kitoh, Yutaka; Nomoto, Sukeharu; Yamada, Yutaka; Yajima, Akimasa; Izumi, Teruo; Shiohara, Yuh.

In: Physica C: Superconductivity and its applications, Vol. 426-431, No. II, 07.10.2005, p. 959-965.

Research output: Contribution to journalConference article

Teranishi, R, Matsuda, J, Nakaoka, K, Fuji, H, Aoki, Y, Kitoh, Y, Nomoto, S, Yamada, Y, Yajima, A, Izumi, T & Shiohara, Y 2005, 'High-Ic processing for YBCO coated conductors by TFA-MOD process', Physica C: Superconductivity and its applications, vol. 426-431, no. II, pp. 959-965. https://doi.org/10.1016/j.physc.2005.02.087
Teranishi, Ryo ; Matsuda, Junko ; Nakaoka, Koichi ; Fuji, Hiroshi ; Aoki, Yuji ; Kitoh, Yutaka ; Nomoto, Sukeharu ; Yamada, Yutaka ; Yajima, Akimasa ; Izumi, Teruo ; Shiohara, Yuh. / High-Ic processing for YBCO coated conductors by TFA-MOD process. In: Physica C: Superconductivity and its applications. 2005 ; Vol. 426-431, No. II. pp. 959-965.
@article{43e19a1a1c174bc6b26d925b79637400,
title = "High-Ic processing for YBCO coated conductors by TFA-MOD process",
abstract = "YBCO films were fabricated on PLD-CeO2/IBAD-Gd 2Zr2 O7/Hastelloy substrates using the TFA-MOD process. In order to obtain higher Ic performance, the thicker films maintaining high-Jc values are required. Jc depended strongly on the PH2O during the crystallization in the process. The pore size was smaller in the high-Jc films crystallized under the medium PH2O condition and became larger in the low-Jc films under both lower and higher PH2O for the YBCO films with a constant thickness. Furthermore, crack generation was observed in thick films crystallized at the high PH2O condition. Consequently, both pore and crack formations limit the Jc properties since large pore causes local reduction of current paths and additionally results in local concentration of electric fields. Jc also depended strongly on the YBCO crystal grain alignment which is affected by in-plane grain alignment of the buffered substrate. Then, the effect of in-plane grain alignment of the CeO2 cap layer on Jc was investigated for thicker YBCO films. As a result, the Jc value increased with improvement of the crystal alignment of the CeO2 cap layers. Finally, a YBCO film with a high-Ic value of 413 A at 77 K in self-field was achieved in a film fabricated on Δφ = 4° of the CeO2 layer using the appropriate crystallization conditions for crack-free film.",
author = "Ryo Teranishi and Junko Matsuda and Koichi Nakaoka and Hiroshi Fuji and Yuji Aoki and Yutaka Kitoh and Sukeharu Nomoto and Yutaka Yamada and Akimasa Yajima and Teruo Izumi and Yuh Shiohara",
year = "2005",
month = "10",
day = "7",
doi = "10.1016/j.physc.2005.02.087",
language = "English",
volume = "426-431",
pages = "959--965",
journal = "Physica C: Superconductivity and its Applications",
issn = "0921-4534",
publisher = "Elsevier",
number = "II",

}

TY - JOUR

T1 - High-Ic processing for YBCO coated conductors by TFA-MOD process

AU - Teranishi, Ryo

AU - Matsuda, Junko

AU - Nakaoka, Koichi

AU - Fuji, Hiroshi

AU - Aoki, Yuji

AU - Kitoh, Yutaka

AU - Nomoto, Sukeharu

AU - Yamada, Yutaka

AU - Yajima, Akimasa

AU - Izumi, Teruo

AU - Shiohara, Yuh

PY - 2005/10/7

Y1 - 2005/10/7

N2 - YBCO films were fabricated on PLD-CeO2/IBAD-Gd 2Zr2 O7/Hastelloy substrates using the TFA-MOD process. In order to obtain higher Ic performance, the thicker films maintaining high-Jc values are required. Jc depended strongly on the PH2O during the crystallization in the process. The pore size was smaller in the high-Jc films crystallized under the medium PH2O condition and became larger in the low-Jc films under both lower and higher PH2O for the YBCO films with a constant thickness. Furthermore, crack generation was observed in thick films crystallized at the high PH2O condition. Consequently, both pore and crack formations limit the Jc properties since large pore causes local reduction of current paths and additionally results in local concentration of electric fields. Jc also depended strongly on the YBCO crystal grain alignment which is affected by in-plane grain alignment of the buffered substrate. Then, the effect of in-plane grain alignment of the CeO2 cap layer on Jc was investigated for thicker YBCO films. As a result, the Jc value increased with improvement of the crystal alignment of the CeO2 cap layers. Finally, a YBCO film with a high-Ic value of 413 A at 77 K in self-field was achieved in a film fabricated on Δφ = 4° of the CeO2 layer using the appropriate crystallization conditions for crack-free film.

AB - YBCO films were fabricated on PLD-CeO2/IBAD-Gd 2Zr2 O7/Hastelloy substrates using the TFA-MOD process. In order to obtain higher Ic performance, the thicker films maintaining high-Jc values are required. Jc depended strongly on the PH2O during the crystallization in the process. The pore size was smaller in the high-Jc films crystallized under the medium PH2O condition and became larger in the low-Jc films under both lower and higher PH2O for the YBCO films with a constant thickness. Furthermore, crack generation was observed in thick films crystallized at the high PH2O condition. Consequently, both pore and crack formations limit the Jc properties since large pore causes local reduction of current paths and additionally results in local concentration of electric fields. Jc also depended strongly on the YBCO crystal grain alignment which is affected by in-plane grain alignment of the buffered substrate. Then, the effect of in-plane grain alignment of the CeO2 cap layer on Jc was investigated for thicker YBCO films. As a result, the Jc value increased with improvement of the crystal alignment of the CeO2 cap layers. Finally, a YBCO film with a high-Ic value of 413 A at 77 K in self-field was achieved in a film fabricated on Δφ = 4° of the CeO2 layer using the appropriate crystallization conditions for crack-free film.

UR - http://www.scopus.com/inward/record.url?scp=25644454337&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25644454337&partnerID=8YFLogxK

U2 - 10.1016/j.physc.2005.02.087

DO - 10.1016/j.physc.2005.02.087

M3 - Conference article

AN - SCOPUS:25644454337

VL - 426-431

SP - 959

EP - 965

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - II

ER -