High-Jc thick YBCO coated conductors by TEA-MOD process

Ryo Teranishi; Junko Matsuda; Koichi Nakaoka; Hiroshi Fuji; Yuji Aoki; Yutaka Kitoh; Teruo Izumi; Yutaka Yamada; Yuh Shiohara

doi:10.1109/TASC.2005.847765

High-Jc thick YBCO coated conductors by TEA-MOD process

Ryo Teranishi, Junko Matsuda, Koichi Nakaoka, Hiroshi Fuji, Yuji Aoki, Yutaka Kitoh, Teruo Izumi, Yutaka Yamada, Yuh Shiohara

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO ₂/IBAD - Gd₂Zr₂O₇/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high J_c values are required. J_c depends strongly on the YBCO crystal alignment. Dependences of J_c on Δφ of the CeO₂ substrates has been investigated. It was found that the J _c value increased with improvement of the crystal alignment of the CeO₂ buffer layers. Also, the J_c value depended strongly on the P_H2O during the crystallization. The pore size in the film was smaller in the high J_c films fabricated under medium P_H2O and becomes larger in the low-J_c films under low and high P _H2O. Furthermore, crack formation was observed in thick films crystallized at high P_H2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the J_c properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO₂/Gd₂Zr₂O₇ layer buffered Hastelloy substrate with Δφ ∼ 4°. A J_c value of 2.02 MA/cm² and transport I_c value of 413 A at 77 K, self-field were obtained.

Original language	English
Pages (from-to)	2663-2666
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART III
DOIs	https://doi.org/10.1109/TASC.2005.847765
Publication status	Published - Jun 1 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{28d4dc56dc97428ebc7515443d924e1d,

title = "High-Jc thick YBCO coated conductors by TEA-MOD process",

abstract = "The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.",

author = "Ryo Teranishi and Junko Matsuda and Koichi Nakaoka and Hiroshi Fuji and Yuji Aoki and Yutaka Kitoh and Teruo Izumi and Yutaka Yamada and Yuh Shiohara",

year = "2005",

month = jun,

day = "1",

doi = "10.1109/TASC.2005.847765",

language = "English",

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issn = "1051-8223",

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number = "2 PART III",

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T1 - High-Jc thick YBCO coated conductors by TEA-MOD process

AU - Teranishi, Ryo

AU - Matsuda, Junko

AU - Nakaoka, Koichi

AU - Fuji, Hiroshi

AU - Aoki, Yuji

AU - Kitoh, Yutaka

AU - Izumi, Teruo

AU - Yamada, Yutaka

AU - Shiohara, Yuh

PY - 2005/6/1

Y1 - 2005/6/1

N2 - The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.

AB - The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.

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