High-Jc thick YBCO coated conductors by TEA-MOD process

Ryo Teranishi, Junko Matsuda, Koichi Nakaoka, Hiroshi Fuji, Yuji Aoki, Yutaka Kitoh, Teruo Izumi, Yutaka Yamada, Yuh Shiohara

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.

Original languageEnglish
Pages (from-to)2663-2666
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume15
Issue number2 PART III
DOIs
Publication statusPublished - Jun 1 2005
Externally publishedYes

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conductors
Hastelloy (trademark)
crack initiation
porosity
Crack initiation
Thick films
thick films
Substrates
alignment
Ion beam assisted deposition
Crystals
Buffer layers
Pulsed laser deposition
Crystallization
Pore size
crystals
buffers
Porosity
Electric fields
crystallization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

High-Jc thick YBCO coated conductors by TEA-MOD process. / Teranishi, Ryo; Matsuda, Junko; Nakaoka, Koichi; Fuji, Hiroshi; Aoki, Yuji; Kitoh, Yutaka; Izumi, Teruo; Yamada, Yutaka; Shiohara, Yuh.

In: IEEE Transactions on Applied Superconductivity, Vol. 15, No. 2 PART III, 01.06.2005, p. 2663-2666.

Research output: Contribution to journalArticle

Teranishi, R, Matsuda, J, Nakaoka, K, Fuji, H, Aoki, Y, Kitoh, Y, Izumi, T, Yamada, Y & Shiohara, Y 2005, 'High-Jc thick YBCO coated conductors by TEA-MOD process', IEEE Transactions on Applied Superconductivity, vol. 15, no. 2 PART III, pp. 2663-2666. https://doi.org/10.1109/TASC.2005.847765
Teranishi, Ryo ; Matsuda, Junko ; Nakaoka, Koichi ; Fuji, Hiroshi ; Aoki, Yuji ; Kitoh, Yutaka ; Izumi, Teruo ; Yamada, Yutaka ; Shiohara, Yuh. / High-Jc thick YBCO coated conductors by TEA-MOD process. In: IEEE Transactions on Applied Superconductivity. 2005 ; Vol. 15, No. 2 PART III. pp. 2663-2666.
@article{28d4dc56dc97428ebc7515443d924e1d,
title = "High-Jc thick YBCO coated conductors by TEA-MOD process",
abstract = "The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.",
author = "Ryo Teranishi and Junko Matsuda and Koichi Nakaoka and Hiroshi Fuji and Yuji Aoki and Yutaka Kitoh and Teruo Izumi and Yutaka Yamada and Yuh Shiohara",
year = "2005",
month = "6",
day = "1",
doi = "10.1109/TASC.2005.847765",
language = "English",
volume = "15",
pages = "2663--2666",
journal = "IEEE Transactions on Applied Superconductivity",
issn = "1051-8223",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2 PART III",

}

TY - JOUR

T1 - High-Jc thick YBCO coated conductors by TEA-MOD process

AU - Teranishi, Ryo

AU - Matsuda, Junko

AU - Nakaoka, Koichi

AU - Fuji, Hiroshi

AU - Aoki, Yuji

AU - Kitoh, Yutaka

AU - Izumi, Teruo

AU - Yamada, Yutaka

AU - Shiohara, Yuh

PY - 2005/6/1

Y1 - 2005/6/1

N2 - The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.

AB - The TFA-MOD process was applied to fabricate YBCO films on PLD - CeO 2/IBAD - Gd2Zr2O7/Hastelloy substrates. In order to obtain higher Ic performance, thicker films maintaining high Jc values are required. Jc depends strongly on the YBCO crystal alignment. Dependences of Jc on Δφ of the CeO2 substrates has been investigated. It was found that the J c value increased with improvement of the crystal alignment of the CeO2 buffer layers. Also, the Jc value depended strongly on the PH2O during the crystallization. The pore size in the film was smaller in the high Jc films fabricated under medium PH2O and becomes larger in the low-Jc films under low and high P H2O. Furthermore, crack formation was observed in thick films crystallized at high PH2O. The large pore causes local reduction of current paths and additionally introduces the concentration of electric fields. It was found that both the porosity and crack formations limit the Jc properties. Finally, a YBCO film with 2.05 μm in thickness was fabricated on a CeO2/Gd2Zr2O7 layer buffered Hastelloy substrate with Δφ ∼ 4°. A Jc value of 2.02 MA/cm2 and transport Ic value of 413 A at 77 K, self-field were obtained.

UR - http://www.scopus.com/inward/record.url?scp=22144451811&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22144451811&partnerID=8YFLogxK

U2 - 10.1109/TASC.2005.847765

DO - 10.1109/TASC.2005.847765

M3 - Article

AN - SCOPUS:22144451811

VL - 15

SP - 2663

EP - 2666

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

SN - 1051-8223

IS - 2 PART III

ER -