Abstract
Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300cm2/Vs with a carrier density of 2 x 10 17 cm-3 at room temperature. The MESFET (0.8μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported for GaAs MESFETs on InP substrates. These results demonstrate the high potential of ionimplanted MESFETs as electronic devices for high-speed InP-based OEICs.
| Original language | English |
|---|---|
| Pages (from-to) | 197-199 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 26 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Oct 1990 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering