High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

Masanobu Miyao; Kaoru Toko; Masashi Kurosawa; Takanori Tanaka; Takashi Sakane; Yasuharu Ohta; Naoyuki Kawabata; Hiroyuki Yokoyama; Taizoh Sadoh

doi:10.1109/ICSICT.2010.5667440

High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

Masanobu Miyao, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm ²/Vs is also demonstrated.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	827-830
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2010.5667440
Publication status	Published - Dec 1 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Nov 1 2010 → Nov 4 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	11/1/10 → 11/4/10

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2010.5667440

Cite this

Miyao, M., Toko, K., Kurosawa, M., Tanaka, T., Sakane, T., Ohta, Y., Kawabata, N., Yokoyama, H., & Sadoh, T. (2010). High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 827-830). [5667440] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667440

High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. / Miyao, Masanobu; Toko, Kaoru; Kurosawa, Masashi et al.

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 827-830 5667440 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Miyao, M, Toko, K, Kurosawa, M, Tanaka, T, Sakane, T, Ohta, Y, Kawabata, N, Yokoyama, H & Sadoh, T 2010, High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667440, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 827-830, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667440

Miyao M, Toko K, Kurosawa M, Tanaka T, Sakane T, Ohta Y et al. High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 827-830. 5667440. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667440

Miyao, Masanobu ; Toko, Kaoru ; Kurosawa, Masashi et al. / High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 827-830 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{9e4215c4ec1947bb9b0ef611123bfa10,

title = "High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates",

abstract = "Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm 2/Vs is also demonstrated.",

author = "Masanobu Miyao and Kaoru Toko and Masashi Kurosawa and Takanori Tanaka and Takashi Sakane and Yasuharu Ohta and Naoyuki Kawabata and Hiroyuki Yokoyama and Taizoh Sadoh",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2010.5667440",

language = "English",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "827--830",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

TY - GEN

T1 - High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

AU - Miyao, Masanobu

AU - Toko, Kaoru

AU - Kurosawa, Masashi

AU - Tanaka, Takanori

AU - Sakane, Takashi

AU - Ohta, Yasuharu

AU - Kawabata, Naoyuki

AU - Yokoyama, Hiroyuki

AU - Sadoh, Taizoh

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm 2/Vs is also demonstrated.

AB - Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm 2/Vs is also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=78751532622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751532622&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2010.5667440

DO - 10.1109/ICSICT.2010.5667440

M3 - Conference contribution

AN - SCOPUS:78751532622

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 827

EP - 830

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

Y2 - 1 November 2010 through 4 November 2010

ER -

High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

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