High-mobility Ge on insulator (GOI) by SiGe mixing-triggered rapid-melting-growth

T. Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High-quality orientation-controlled Ge on insulator (GOI) structures are essential to realize high-performance thin-film transistors (TFTs) and epitaxial templates for multifunctional 3-dimensional large-scale integrated circuits (3D-LSIs). We have investigated the Si-seeding rapid-melting process and demonstrated formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The transmission electron microscopy observations revealed no-defects in the laterally grown Ge regions. The Ge layers showed a high hole mobility exceeding 1100 cm 2.Vs owing to the high crystallinity. This novel SiGe mixing-triggered growth technique opens up the possibility of the next-generation TFTs and multifunctional 3D-LSIs.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages409-418
Number of pages10
Edition6
DOIs
Publication statusPublished - Dec 1 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'High-mobility Ge on insulator (GOI) by SiGe mixing-triggered rapid-melting-growth'. Together they form a unique fingerprint.

Cite this